BDW83D-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	15A
Voltage - Collector Emitter Breakdown (Max):	120V
Vce Saturation (Max) @ Ib, Ic:	4V @ 150mA, 15A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 6A, 3V
Power - Max:	3.5W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-218-3
Supplier Device Package:	SOT-93

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Introduction

The BDW83D-S is a bipolar junction transistor (BJT) that is typically used in applications such as audio signal amplification and switching. It is manufactured in a small, surface-mount package and provides high current gain and good insulation performance. This type of BJT is mainly used in low- and moderate-power switching and amplification applications in consumer electronics, automotive, and industrial control systems. The BDW83D-S is designed to operate up to a maximum voltage rating of 25 volts and a power rating of 15 watts.

Structure

The BDW83D-S is an NPN enhancement mode device, meaning that its collector is used to control current flow between the collector and the emitter. The device consists of an emitter, a base, and a collector. The three terminals of the BJT are connected to through-holes located on the bottom and the sides of the package. The package is constructed using a leadframe, a copper slug and a plastic cover. The slug is used as a contact pad for soldering the BDW83D-S onto a PCB. The package also includes three pins to allow for the connection of electrical wires.

Working Principle

The BDW83D-S is a base-driven BJT, meaning that current flow between the emitter and the collector is controlled by a current flowing into the base of the transistor. When the base is “ON”, the collector-base junction is forward-biased and current flows between the collector and the emitter. Conversely, when the base is “OFF”, the collector-base junction is reverse-biased and current does not flow between the collector and the emitter. This type of BJT is also referred to as a controllable switch.

Applications

The BDW83D-S can be used in various low- and moderate-power applications, such as audio signal amplification, power switching, and control systems. In audio applications, the BDW83D-S is used as a discrete amplifier unit or as part of an amplifier power stage. In power switching applications, the device is used to switch AC or DC loads. In control systems, the BJT is used as an activator, a rectifying diode, or as an amplifying element to control the speed and direction of a motor.

Conclusion

The BDW83D-S is a bipolar junction transistor (BJT) that is used in low- and moderate-power amplification, switching, and control applications. It is designed to operate up to 25 volts and 15 watts and is typically manufactured in a small surface-mount package with through-holes for connection of electrical wires. Its working principle is based on current flow between the collector and the emitter and its collector being used to control the same current flow.

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