Allicdata Part #: | BFL4004-ND |
Manufacturer Part#: |
BFL4004 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 4.3A TO-220F |
More Detail: | N-Channel 800V 4.3A (Ta) 2W (Ta), 36W (Tc) Through... |
DataSheet: | BFL4004 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 3.25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta), 36W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FI(LS) |
Package / Case: | TO-220-3 Full Pack |
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The BFL4004 is a surface-mount n-channel single-level enhancement mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET) suitable for low-power applications.
The device is based on an advanced complementary structure which utilizes an optimized Low Temperature Poly Silicon (LTPS) Gate material.
The BFL4004 is a high voltage, high current, low power, high speed switching device with the highest breakdown voltage of 800V and a drain current up to 2.0A at 25° C, making it suitable for many applications ranging from high voltage power supplies, motor controllers, and portable power to logic, as well as audio, video, and communications equipment.
The BFL4004 features a simple gate drive and logic level compatibility, making it an ideal device for many applications that require a low-power yet high-performance switching device that works in both digital and analog environments.
The BFL4004 uses a metal oxide semiconductor structure which allows the current to flow in both the forward and reverse directions, depending on the gate voltage. The gate voltage determines the state of the device, either “ON” or “OFF.” When the gate voltage is above a certain level, the MOSFET is “ON” and allows current to flow from the drain to the source; when it is below a certain level, the MOSFET is “OFF” and does not allow current to flow. This voltage switching mechanism is the primary working principle of the BFL4004.
The BFL4004 is also equipped with a variety of other features, such as an adjustable drain-source resistance and an adjustable drain-source voltage. Additionally, the device is highly efficient, with a maximum switching rate of 4GHz, making it ideal for high-speed applications. It also has a low gate charge and a high current density, which allows it to handle more power in a smaller package.
The BFL4004 can be used in a wide range of applications, including power supplies, motor controllers, portable power supplies, logic and audio/video/communications equipment. It is also often used in power switching applications since its high voltage, high current, and low power capabilities make it ideal for use in many of today’s power-hungry consumer electronics.
The BFL4004 is a versatile device that can be used in a variety of applications. Its simple gate drive and logic level compatibility make it ideal for low-power yet high-performance applications. Its high current density and low gate charge also make it suitable for many power switching applications and other high-speed applications. The BFL4004 is a reliable and cost-effective solution for many different applications.
The specific data is subject to PDF, and the above content is for reference
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