Allicdata Part #: | BFL4026-1E-ND |
Manufacturer Part#: |
BFL4026-1E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 3.5A |
More Detail: | N-Channel 900V 3.5A (Tc) 2W (Ta), 35W (Tc) Through... |
DataSheet: | BFL4026-1E Datasheet/PDF |
Quantity: | 200 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta), 35W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F-3FS |
Package / Case: | TO-220-3 Full Pack |
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The BFL4026-1E is an enhancement-mode non-polarity insulated field effect transistor (NFET). This type of transistor is versatile, often found in a wide variety of applications and circuits. Introduced by ON Semiconductor in the mid-1990s, the BFL4026-1E has been used in a variety of devices, from analog and digital switch circuits to high frequency wireless communication equipment.
In general, FETs are three-terminal semiconductor devices that rely on electric fields to control current flow. The terminals are the source, gate, and drain. Depending on the type of FET, the gate may control either the source to drain current (in enhancement-mode FETs) or the drain to source current (in depletion-mode FETs). As its name implies, the BFL4026-1E is an enhancement-mode NFET, meaning that its gate will control the current flow between the source and the drain. It has an insulated gate that prevents current leakage, allowing it to be used in a wide variety of applications.
In order to understand the working principle of the BFL4026-1E, it is important to understand how an FET works. FETs work by controlling the flow of current between the source and drain using an electric field. The electric field is created by the difference in voltage between the gate and the source. When the voltage on the gate is higher than the voltage on the source, the electric field created by this difference in voltage will cause electrons to flow from the source towards the drain, allowing current to flow between the two terminals. When the opposite is true, no current will flow between the source and the drain.
The BFL4026-1E is a specialized device designed to work as a switch in analog and digital circuits. Its insulated gate allows it to be used in circuits that operate with voltages up to 26V, making it well-suited for a variety of applications. Its low on-resistance makes it ideal for applications that require low-voltage, low-power switching, and its low gate-to-source capacitance makes it suitable for high-frequency applications. For example, it is used in the input stages of radio receivers to provide a low-noise switching connection.
The BFL4026-1E has a broad application field, from analog and digital switch circuits to high frequency wireless communication equipment. It is used in many applications where low-voltage, low-power switching is needed, and is also suitable for high-frequency operations, making it ideal for a wide variety of uses. Its versatility, coupled with its robust design, makes it a popular choice in a wide variety of devices.
The specific data is subject to PDF, and the above content is for reference
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