Allicdata Part #: | BFL4037-1E-ND |
Manufacturer Part#: |
BFL4037-1E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 11A |
More Detail: | N-Channel 500V 11A (Tc) 2W (Ta), 40W (Tc) Through ... |
DataSheet: | BFL4037-1E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 48.6nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta), 40W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F-3FS |
Package / Case: | TO-220-3 Full Pack |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BFL4037-1E is a single N-channel enhancement mode MOSFET transistor with a glossy black coating. It is primarily used in areas where an isolated, high-power, low-noise power solution is required. Additionally, its optimized low gate charge and low R DS(on) typically make it ideal for high frequency applications and for high efficiency power management.
The BFL4037-1E is a cost effective solution for a wide range of applications, from robotic actuators and DC-DC converters to motor controllers, solar cell controllers, and management of AC-DC functions and other general purpose electronic circuits. This MOSFET works almost flawlessly in all conditions, making it the comfortable and preferred choice for many.
The BFL4037-1E adopts a wide range of processing technologies, such as the latest process packaging technology, epoxy molding technology and resistance welding technology, among many others. Moreover, its optimized die parameters make it very versatile, allowing for use in many different applications in a variety of different conditions.
The BFL4037-1E is operated by biasing it with a gate-source voltage at which the drain current flows from the drain to the source.The voltage of the gate-source affects the conductivity of the transistor; by increasing this voltage, the current flow is increased. Conversely, decreasing the gate-source voltage decreases the current flow. This is known as the working principle of MOSFET transistors.
In terms of its application, the BFL4037-1E is an all-purpose MOSFET transistor, as it is suitable for almost any purpose requiring linear voltage control with only four pins, one of which is the gate pin. Its small size, remarkable rate power handling capabilities, low gate charge, and low R DS(on) make it particularly suitable for high-performance applications.
This MOSFET transistor is rated at a maximum gate voltage of 5.5V, a 650V drain-source voltage, and a maximum drain current of 80A. The BFL4037-1E transistor is also rated for pulse operation, allowing its maximum drain current to reach up to 160A at a drain-source voltage of 600V, making it a great choice for those searching for a powerful MOSFET transistor.
With the availability of different types of transistors in the market, it is important to understand the characteristics and working principles of different types of transistors
The specific data is subject to PDF, and the above content is for reference
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