Allicdata Part #: | BFR92ALT1-ND |
Manufacturer Part#: |
BFR92ALT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF POWER TRANSISTOR |
More Detail: | RF Transistor 15V 25mA 4.5GHz 273mW Surface Mount... |
DataSheet: | BFR92ALT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Part Status: | Obsolete |
Transistor Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 4.5GHz |
Noise Figure (dB Typ @ f): | 3dB @ 500MHz |
Gain: | -- |
Power - Max: | 273mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 14mA, 10V |
Current - Collector (Ic) (Max): | 25mA |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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BFR92ALT1 application field and working principle
The BFR92ALT1 is a miniature NPN dual-gate epitaxial planer RF Mosfet, designed for use in VHF and UHF applications, from 50 MHz to 1000 MHz. The BFR92ALT1 has separate gates for low-power and high-power. It is suitable for both general purpose RF applications, such as VHF/UHF oscillators, local oscillators, interstage amplifiers and power amplifiers in cellular, PCS, and PHS applications, as well as for linear amplification up to VHF/UHF frequencies in various television applications.
This device utilizes a novel dual-gate integration process providing two separate gate electrodes. This enables the device to operate in two completely different RF regimes, low-power and high-power, depending on the gate voltage applied. The BFR92ALT1 is especially suitable for dual-gate amplifier and mixer applications, as both gates may be driven simultaneously, operating at different power levels.
Working Principle
The BFR92ALT1 works using the same principle as other transistors, where current flow between the source and drain of a transistor is regulated by applying an electric field across a gate. In the case of the BFR92ALT1, two gates are used - the \'low power\' gate and the \'high power\' gate.
The low power gate operates at low voltages, typically between 0.8 and 1.2 volts, and is used to control the low power RF signals, such as local oscillators (LO) and signal amplifiers. The high power gate operates at higher voltages, usually between 2.0 and 2.5 volts, and is used to control the high power RF signal, such as power amplifiers, mixers and signal splitters.
The current gain of the BFR92ALT1 is also adjustable by varying the gate-source voltage. At low gate voltage, the current gain is low, and at higher gate voltage, the current gain is high. This makes it ideal for applications that require an adjustable gain, such as attenuators and variable gain amplifiers.
Applications of the BFR92ALT1
The BFR92ALT1 is suitable for use in a variety of applications, including different VHF and UHF applications, such as local oscillator, interstage amplifier and power amplifier in cellular, PCS and PHS applications, TV receive applications, signals splitters and attenuators, dual-gate amplifier and mixer applications.
It is also suitable for use in amplifying low-level signals received from antennas, such as FM and TV reception, as well as in low-power radio frequency applications, such as pager and clock radio receivers.
The BFR92ALT1 is also ideal for use in high-frequency switching applications, such as RF relay switching, RF attenuator switching and digital control systems.
Conclusion
The BFR92ALT1 is a miniature NPN dual-gate epitaxial planer RF Mosfet, designed for use in VHF and UHF applications, from 50 MHz to 1000 MHz. The BFR92ALT1 has two separate gates, which enable it to operate in two completely different RF regimes, low-power and high-power, depending on the gate voltage applied. It is suitable for use in numerous applications, such as local oscillators, interstage amplifiers, power amplifiers, signal splitters and attenuators, mixers and high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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