BFR93A,235 Allicdata Electronics
Allicdata Part #:

BFR93A,235-ND

Manufacturer Part#:

BFR93A,235

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 12V 35MA 6GHZ SOT23
More Detail: RF Transistor NPN 12V 35mA 6GHz 300mW Surface Moun...
DataSheet: BFR93A,235 datasheetBFR93A,235 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
Gain: --
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BFR93
Description

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BFR93A,235 is a type of transistor belonging to the Transistors - Bipolar (BJT) - RF category. It is a NPN small signal transistor with low noise and high gain, perfect for RF amplification. It is available in the two packages, the Axial (TO-18) and SMD packages. It is widely used in low functional radio and wireles systems, such as remote control applications, miniaturized transmitters, FM receivers, and security systems.

The BFR93A,235 transistor belongs to the RF Class. This type of transistor works on the principle of a bipolar junction transistor, meaning it is composed of two different p- and n-type semiconductor layers which are connected together to form solid-state layers. This arrangement of layers allows for controlled current flow through the transistor, which can be decribed by the three basic modes of operation which are: cut off, saturation, and active regions.In the active region, the current characteristics are dependent upon the relations of the base-emitter voltage, the base current and the collector-emitter voltage. The relation between these parameters is explained by the most common transistor equation, the Ebers-Moll equation. This equation accurately describes the behavior of the transistor in all of the three regions.

The BFR93A,235 is designed to be used in amplifying and receiving applications due to its high gain of 16 dB. It is capable of operation within a very wide frequency range. It has an FM gain of 10 dB and can provide up to 5 cm amplification. This is especially useful in applications such as UMTS and GSM technologies, high frequency video reception (camera range up to 30 m).

In terms of physical characteristics, the BFR93A,235 transistor is quite compact, making it suitable for use in small applications, such as mobile device amplifiers. The package size is quite small, standing at only 2.6 x 1.6 x 0.6 mm. It is relatively lightweight, weighing in at only 0.2 grams. The BFR93A,235 transistor also has a very low noise figure, which is ideal for applications where high noise performance is required.

The BFR93A,235 transistor is a dependable and versatile component, perfect for almost any RF application. It is very stable and provides low distortion and low levels of noise. It has a wide frequency range, making it ideal for a variety of applications. Its small size also makes it suitable for a number of miniaturized systems and its high gain is always desirable in applications requiring long range communication. Overall, the BFR93A,235 is a great choice for anyone looking for a top-quality RF bipolar transistor.

The specific data is subject to PDF, and the above content is for reference

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