BFR92AW,135

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	5GHz
Noise Figure (dB Typ @ f):	2dB ~ 3dB @ 1GHz ~ 2GHz
Gain:	--
Power - Max:	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	65 @ 15mA, 10V
Current - Collector (Ic) (Max):	25mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Base Part Number:	BFR92

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The BFR92AW,135 is a transistor that is classified as a Bipolar Junction Transistor or BJT. BJTs are three-terminal devices comprising of a control terminal and two current-carrying terminals. The BFR92AW,135 is a type of BJT known as a radio-frequency or RF transistor. Specifically, the BFR92AW,135 is an NPN transistor designed for RF amplification applications.The primary use of the BFR92AW,135 is in RF applications where low noise and low power consumption are desired. It is particularly suited for wireless applications such as in telemetry systems, where it is used to amplify and modulate signals. The BFR92AW,135 is widely used in the automotive market, where it is used in GPS receivers and communication devices. It is commonly used in mobile phones, along with other devices such as PDAs and GSM modems.The BFR92AW,135 a bipolar transistor that is an NPN type, which has associated parameters. The most important parameters of the BFR92AW,135 are the maximum current and voltage that each of its terminals can take.The collector-emitter voltage, commonly referred to as the Vce, is 45V and the maximum collector current is 500mA while the base-emitter voltage, or Vbe, is 5V. The transistor can operate at frequencies between 10MHz and 300MHz and its power gain is 40dB. The collector-emitter saturation current is 0.7mA.The BFR92AW,135 is a BJT transistor, which means that it relies on the principle of minority carrier injection to operate. In an NPN type BJT like the BFR92AW,135, the operation is based on the flow of electrons from the emitter to the base, due to the presence of a negative voltage at the base.The electrons in turn, create a layer of negative charge at the base that forms a barrier to the flow of current from the collector to the emitter. This then forms the basis for the transistor’s amplification capability. The base current or Ib directly controls the collector current, or Ic, and this forms the basis of the transistor’s amplification principle.In conclusion, the BFR92AW,135 is a transistor that is classified as a BJT or a Radio-Frequency transistor. It is an NPN transistor designed for RF amplification applications and is used primarily in automotive and mobile communication devices. The parameters of the transistor are Vce of 45V, Vbe of 5V, maximum collector current of 500mA, and power gain of 40dB. The transistor operates based on the principle of minority carrier injection i.e. the flow of electrons from the emitter to the base, due to the presence of a negative voltage at the base, which in turn forms the basis for the transistor’s amplification capabilities.

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