BFR92AW,115 Discrete Semiconductor Products

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The BFR92AW,115 transistor is a high performance, low noise, Bipolar N-P-N type Field Effect Transistor (FET). This transistor is typically used in circuits requiring high accuracy and repeatability, hence providing performance far greater than conventional transistors. The BFR92AW,115 transistor has been designed for low noise RF applications, with a versatile range of current gain, temperature, and frequency range.

This transistor uses a two terminated N-P-N metal oxide semiconductor (MOS) structure which allows it to operate more efficiently than conventional bipolar junction transistors (BJT). The N-P-N metal oxide structure increases the performance of the transistor while reducing power dissipation and noise levels. This allows the BFR92AW,115 FET to achieve higher levels of accuracy and high speed without sacrificing noise levels.

The BFR92AW,115 transistor is used in a wide variety of applications, including radio communication equipment, amplifier stages, switch circuits and data acquisition systems for a range of applications. This FET also provides fast switching times and facilitates data transfer operations over a wide frequency range. The device also features low thermal resistance and low noise level which makes it suitable for applications requiring high speed operation. The FET can also provide significant power savings.

In terms of operation, the BFR92AW,115 FET is normally operated with a single gate bias of Vgs and the device is activated with a voltage between 5V and 25V at Vdd (drain voltage). This type of FET is also capable of operating with low gate-source voltage (Vgs), which can facilitate system level optimization by utilizing different gate bias voltage levels. The device also permits drain-source current (Ids) to be controlled by applying appropriate gate-source voltage level. It allows fast switching of devices when desired, as the gate bias can be rapidly removed when the FET is not desired.

The BFR92AW,115 FET is used in RF applications requiring high performance, with low noise levels, and fast switching. This is due to the relatively low power consumption of the transistor, along with its excellent electrical parameters that allow it to operate in a variety of environments. Furthermore, the FET features a wide operating temperature range and has a temperature coefficient of about 0.4°C/°C for a drain voltage of 25V. This means that its performance is not affected by rapid changes in temperature.

Overall, the BFR92AW,115 is a high performance, low noise transistor with excellent electrical parameters and wide operational temperature range. It is capable of providing excellent results for high precision applications such as radio communication equipment, high speed data acquisition systems, and amplifier stages. This FET offers high speed operation, low power consumption, and excellent noise performance. Furthermore, the BFR92AW,115 transistor is ideal for applications requiring fast switching and high performance.

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