BFR94A,215

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	5GHz
Noise Figure (dB Typ @ f):	2.1dB ~ 3dB @ 1GHz ~ 2GHz
Gain:	--
Power - Max:	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	65 @ 15mA, 10V
Current - Collector (Ic) (Max):	25mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	BFR94

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The BFR94A,215 is a NPN epitaxial planar high frequency transistor designed for use in high-gain, low noise and high-frequency applications. It is a balanced RF transistor with a low noise figure, a high gain and a high power handling capability which makes it especially suitable for use in microwave applications such as broadband amplifiers, mixers, oscillator, and high-frequency receivers.The BFR94A,215 is available as a surface mount device and incorporates an integrated gold bond wire on the contact area for an ease of installation onto a board. The BFR94A,215 is packaged in a plastic SOT-223 package, which is hermetically sealed with solder. It is designed to operate from a supply voltage of 4.5V and has a load impedance of 50 –90 ohms.The BFR94A,215 transistor is designed to operate over a wide frequency range from 2.4GHz to 4GHz, making it suitable for use in a wide range of applications such as satellite communication systems, digital satellite TV receivers, wireless networks and high speed local area networks. It is also ideal for use in wireless tranmissions, superheterodyne receivers, television and computer applications.The BFR94A,215 can be used in both CW and pulsed applications and is extremely stable with a tracking error of 0.5dB. It has a maximum gain of 10dB and a maximum output power of 20dBm. The BFR94A,215 has an operating temperature range of -40 to +85 degrees Celsius and is available in an SOT-223 package.It is a three-terminal device with an emitter (E), a collector (C) and a base (B). Using a combination of a forward-biased base and collector, the BFR94A,215 produces an amplified output signal. When a current is applied to the base, a portion of it is allowed to flow through the transistor, which then amplifies the signal. The output voltage of the transistor is dependent on the amount of base current and on the amount of collector current. The gain of the BFR94A,215 is determined by the ratio of the collector current to the base current and is determined by the transistors internal transconductance. The transconductance is a measure of the transistor\'s ability to control the current flowing between the base and collector and is expressed as the ratio between the base-to-collector voltage and the change in the collector current. The gain of the BFR94A,215 is typically around 10dB and can be adjusted by altering the current ratio between the collector and the base. The BFR94A,215 is an ideal solution for RF and microwave applications that require high gain and low noise due to its robust construction, reliable performance and its low cost. Its wide operating frequency range makes it suitable for a variety of systems and its ability to be used in both CW and pulsed applications makes it attractive for use in a range of electronic devices. Overall, the BFR94A,215 is an ideal choice for use in a number of high-frequency applications.

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