BFR93AW,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-6206-2-ND |
Manufacturer Part#: |
BFR93AW,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 12V 35MA 5GHZ SOT323 |
More Detail: | RF Transistor NPN 12V 35mA 5GHz 300mW Surface Moun... |
DataSheet: | BFR93AW,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 5GHz |
Noise Figure (dB Typ @ f): | 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 30mA, 5V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BFR93 |
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BFR93AW,115 is a surface mount transistor from the family of Bipolar Junction Transistors. Bipolar Junction Transistors (BJTs) are three-terminal active semiconductor devices which act as an amplifier or switch for the application of radio frequency (RF). BFR93AW,115 is a reliable, versatile, and cost-effective transistor which is widely used by industrial and commercial sectors. It is specially designed to offer superior RF performance when compared to other BJTs.
BFR93AW,115 features a high-frequency range up to 1GHz and a small size of the package ranging from 0.171” to 0.197”. It is a low power consuming transistor typically used at higher frequencies and requires very little compatibility between the source, gate and drain of the BJT. Apart from its low power consumption features, this transistor also offers excellent performance in terms of efficiency and stability. Additionally, BFR93AW,115 has a very low resistance across the transistor which helps to reduce power loss and ensures optimum performance during the operation.
This BJT is commonly used for operating high frequency radio equipment, video systems, RF amplifiers and other related applications. Moreover, the wide range frequency response of up to 1GHz makes this transistor a suitable candidate for high speed switching applications. Moreover, its low noise characteristics and reliability has made it a popular choice in commercial communication systems, satellite broadcasting systems and many more.
In terms of its working principle, BFR93AW,115 has three pairs of electrodes which serve as the source, gate and drain. The first pair of electrodes serves as the source of the current and controls the flow of current in the circuit. The second pair is the gate, which controls the current flow between the drain and the source of the BJT. Finally, the third pair of electrodes is the drain which controls the current from the source to the gate. The amount of current flowing through the BJT is determined by the intensity of the gate voltage. As the voltage increases, more current flows through the BJT and vice versa.
BFR93AW,115 is an excellent choice for high frequency switching applications due to its low power consumption, high frequency range and small size. It is suitable for use in various commercial and industrial applications such as transmitters, amplifiers, receivers, servo motors, and more. Moreover, the low noise characteristics make it a great choice for communications systems and satellite broadcasting systems. Finally, its efficient and reliable operation makes it a popular choice for users.
The specific data is subject to PDF, and the above content is for reference
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