BFR93AWH6327XTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BFR93AWH6327XTSA1TR-ND |
Manufacturer Part#: |
BFR93AWH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 12V 90MA SOT323 |
More Detail: | RF Transistor NPN 12V 90mA 6GHz 300mW Surface Moun... |
DataSheet: | BFR93AWH6327XTSA1 Datasheet/PDF |
Quantity: | 15000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 6GHz |
Noise Figure (dB Typ @ f): | 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz |
Gain: | 10.5dB ~ 15.5dB |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 30mA, 8V |
Current - Collector (Ic) (Max): | 90mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BFR93 |
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The BFR93AWH6327XTSA1 is an RF transistor categorized under Bipolar (BJT) Transistors. It uses a small signal NPN-type transistor that is designed for both amplifying and switching applications in radio frequency domain.
Specifically, this transistor has a very low noise figure and offers a wide range of DC and AC characteristics. It is also capable of frequencies up to 12GHz, making it ideal for high performance RF amplifiers and switches.
In terms of applications, BFR93AWH6327XTSA1 can be used for amplifying and switching signals in RF-related analog circuits. Its performance is especially suited for applications such as Band Pass filters, oscillators, tuners, and amplifiers, as well as microwave switching modules such as low noise amplifiers, mixers, and phase shifters. In addition, this transistor is also commonly used for precision audio applications as it can provide a clean distortion-free output.
In terms of working principle, the BFR93AWH6327XTSA1 is built on a NPN structure and it is based on a structure that consists of a substrate, emitter, base and collector. This transistor operates by controlling the base-emitter current and thereby controlling the collector current. Since this transistor works at radio frequencies, it should be able to handle radiation of low enough wavelength.
As the base-emitter current is increased, or a greater amount of base current is applied, the collector current increases. Similarly, when the base current is decreased, the collector current reduces. In addition, this transistor works with voltage and the collector current is proportional to the voltage applied to the base.
As such, this transistor works by amplifying and switching signals in RF and other analog circuits. Additionally, it can also be used for precision audio applications due to its relatively low noise. The BFR93AWH6327XTSA1 transistor is therefore a useful tool in both RF and audio applications thanks to its wide range of DC and AC characteristics, as well as its ability to handle low wavelength radiation.
The specific data is subject to PDF, and the above content is for reference
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