BLC10G18XS-360AVTY Allicdata Electronics
Allicdata Part #:

BLC10G18XS-360AVTY-ND

Manufacturer Part#:

BLC10G18XS-360AVTY

Price: $ 51.72
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: BLC10G18XS-360AV/SOT1258/REELD
More Detail: RF Mosfet LDMOS 1.805GHz ~ 1.88GHz 18dB SOT-125...
DataSheet: BLC10G18XS-360AVTY datasheetBLC10G18XS-360AVTY Datasheet/PDF
Quantity: 1000
100 +: $ 47.02500
Stock 1000Can Ship Immediately
$ 51.72
Specifications
Series: --
Part Status: Active
Transistor Type: LDMOS
Frequency: 1.805GHz ~ 1.88GHz
Gain: 18dB
Current Rating: --
Noise Figure: --
Power - Output: --
Package / Case: SOT-1258-7
Supplier Device Package: SOT-1258-7
Description

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The BLC10G18XS-360AVTY is an RF transistor, based on a field effect structure, which is specifically designed for use in wireless transmitters on the 1.5 - 2 GHz frequency band. This type of transistor is extremely versatile and can be used in a range of applications including amplifier stages, phase shifters, switches and VHF/UHF telecommunications equipment.

The device is a GaN (Gallium Nitride) on SiC (Silicon Carbide) heterojunction transistor and is capable of achieving power levels of up to 10 Watts, with extremely low losses in the active region. The device is designed to offer high efficiency, helping to reduce power losses associated with other transistors in the same class.

The device uses a single-gate structure, allowing it to work in an open-ended configuration, meaning that it can be used in amplifier stages and other devices without the need for resistors or matching networks. It is also designed to provide excellent isolation between individual devices, meaning that it is well-suited for use in parallel amplifier stages, providing improved power levels and stability.

The working principle of the BLC10G18XS-360AVTY is based on the principle of Field Effect Transistors (FET) which uses a channel of semiconductor material between two metal electrodes (called the Source and the Drain) within an insulated semiconductor substrate. In this case, the semiconductor material used is GaN.

When a positive voltage is applied to the gate, it attracts free electrons from the semiconductor channel, forming a channel of negative charge carriers which allows current to flow from the source to the drain. This type of transistor is known as an N-type Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

Due to its high breakdown voltage and operation over a wide frequency range, the BLC10G18XS-360AVTY is suitable for a range of different applications, including radio frequency power amplifiers, microwave power amplifiers, switching circuits and phase shifters.

The device is also designed to be easy to use, with an adjustable gate voltage and gate current, as well as an adjustable input/output impedance. In addition, the device can be used as a load switch with a very low On/Off resistance, meaning that it can be used for switching large signals in a low noise environment.

Overall, the BLC10G18XS-360AVTY is an excellent RF transistor, capable of achieving very high power levels with low noise and minimal losses. The device is suitable for use in a range of different applications in the 1.5 - 2 GHz frequency band, including power amplifiers, switching circuits and phase shifters, making it a very versatile and useful component.

The specific data is subject to PDF, and the above content is for reference

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