| Allicdata Part #: | 1603-1120-ND |
| Manufacturer Part#: |
BLC10G27LS-320AVTZ |
| Price: | $ 60.28 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | BLC10G27LS-320AV/SOT1258/TRAYD |
| More Detail: | RF Mosfet LDMOS 28V 400mA 2.5GHz ~ 2.7GHz 16dB 320... |
| DataSheet: | BLC10G27LS-320AVTZ Datasheet/PDF |
| Quantity: | 50 |
| 1 +: | $ 54.80370 |
| 10 +: | $ 51.97500 |
| 100 +: | $ 47.02500 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Transistor Type: | LDMOS |
| Frequency: | 2.5GHz ~ 2.7GHz |
| Gain: | 16dB |
| Voltage - Test: | 28V |
| Current Rating: | 2.8µA |
| Noise Figure: | -- |
| Current - Test: | 400mA |
| Power - Output: | 320W |
| Voltage - Rated: | 65V |
| Package / Case: | SOT1258-1 |
| Supplier Device Package: | SOT1258-1 |
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BLC10G27LS-320AVTZ is a type of high performance transistor and an important component in advanced semiconductor power products. The device is primarily used for RF applications in the field of advanced wireless communication. It is a multi-gate field effect transistor capable of producing power levels of up to 2 Watts. This advanced transistor can be used for applications such as WiFi, Bluetooth, ZigBee, cellular, satellite and other wireless communication applications.The BLC10G27LS-320AVTZ is a high-gain, high frequency, multi-gate transistor which performs the additional operation of noise reduction. The device is composed of three separate gates, each of which contains a metal oxide semiconductor (MOS) structure. These MOS devices together produce a very large bandwidth, making the BLC10G27LS-320AVTZ suitable for high frequency wireless communication applications. In addition, the transistor can operate at high frequencies without any significant output voltage drop, meaning that the device is highly reliable.The working principle of the BLC10G27LS-320AVTZ is based on the principle of field effect transistors. In the basic principle of a FET, an electric field is created between the source and the drain. This electric field modulates the current passing through the FET. The BLC10G27LS-320AVTZ has three separate gates, each of which contains a separate MOS structure. Each gate works independently to create an electric field between the source and the drain. This electric field modulates the current passing through the transistor, allowing for greater control of the output.The BLC10G27LS-320AVTZ is an excellent choice for applications that require high frequency performance and high power output. Its ability to produce a wide range of frequencies and its high power output makes it an ideal choice for applications such as WiFi, Bluetooth, ZigBee, cellular and satellite communication. In addition, the multi-gate design of the transistor helps to reduce noise and make the device more reliable. The BLC10G27LS-320AVTZ is a great choice for any application that requires a high performance transistor for wireless communication.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| BLC10G18XS-360AVTY | Ampleon USA ... | 51.72 $ | 1000 | BLC10G18XS-360AV/SOT1258/... |
| BLC10G18XS-550AVTY | Ampleon USA ... | 66.51 $ | 1000 | BLC10G18XS-550AVT/SOT1258... |
| BLC10G27LS-320AVTZ | Ampleon USA ... | 60.28 $ | 50 | BLC10G27LS-320AV/SOT1258/... |
| BLC10G18XS-400AVTZ | Ampleon USA ... | 51.86 $ | 60 | BLC10G18XS-400AVT/SOT1258... |
| BLC100J112B4B | Cornell Dubi... | 4.12 $ | 1000 | CAP FILM 10UF 5% 1.1KVDC ... |
| BLC10G22LS-240PVTY | Ampleon USA ... | 45.67 $ | 1000 | RF MOSFET LDMOS 28V SOT12... |
| BLC10M6XS200Z | Ampleon USA ... | 33.01 $ | 56 | RF MOSFET LDMOS 28V SOT12... |
| BLC10G22XS-400AVTY | Ampleon USA ... | 51.72 $ | 1000 | BLC10G22XS-400AVT/SOT1258... |
| BLC10G22XS-550AVTZ | Ampleon USA ... | 64.6 $ | 1000 | BLC10G22XS-550AVT/SOT1258... |
| BLC10G22XS-400AVTZ | Ampleon USA ... | 60.28 $ | 60 | BLC10G22XS-400AVT/SOT1258... |
| BLC10G18XS-550AVTZ | Ampleon USA ... | 77.5 $ | 60 | BLC10G18XS-550AVT/SOT1258... |
| BLC10G27LS-320AVTY | Ampleon USA ... | 51.72 $ | 1000 | BLC10G27LS-320AV/SOT1258/... |
| BLC10M6XS200Y | Ampleon USA ... | 26.74 $ | 1000 | BLC10M6XS200/SOT1270/REEL... |
| BLC140J901B4B | Cornell Dubi... | 3.78 $ | 1000 | CAP FILM 14UF 5% 900VDC R... |
| BLC10G22XS-240PWTZ | Ampleon USA ... | 45.84 $ | 1000 | BLC10G22XS-240PWT/SOT1275... |
| BLC10G22LS-240PVTZ | Ampleon USA ... | 53.33 $ | 60 | RF MOSFET LDMOS 28V SOT12... |
| BLC120J112B4D | Cornell Dubi... | 4.58 $ | 1000 | CAP FILM 12UF 5% 1.1KVDC ... |
| BLC120J901B4A | Cornell Dubi... | 3.56 $ | 1000 | CAP FILM 12UF 5% 900VDC R... |
| BLC10G18XS-360AVTZ | Ampleon USA ... | 60.28 $ | 55 | BLC10G18XS-360AV/SOT1258/... |
| BLC10G20LS-240PWTZ | Ampleon USA ... | 53.33 $ | 60 | RF MOSFET LDMOS 28V SOT12... |
| BLC10G20LS-240PWTY | Ampleon USA ... | 45.67 $ | 1000 | RF MOSFET LDMOS 28V SOT12... |
| BLC10G22XS-550AVTY | Ampleon USA ... | 55.43 $ | 1000 | BLC10G22XS-550AVT/SOT1258... |
| BLC160J901B4C | Cornell Dubi... | 3.81 $ | 1000 | CAP FILM 16UF 5% 900VDC R... |
| BLC150J701B4A | Cornell Dubi... | 4.95 $ | 76 | CAP FILM 15UF 5% 700VDC R... |
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BLC10G27LS-320AVTZ Datasheet/PDF