BLC10G18XS-550AVTY

Series:	--
Packaging:	Tray
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	1.805GHz ~ 1.88GHz
Gain:	16dB
Voltage - Test:	28V
Current Rating:	2.8µA
Noise Figure:	--
Current - Test:	800mA
Power - Output:	550W
Voltage - Rated:	65V
Package / Case:	SOT-1258-4
Supplier Device Package:	SOT1258-4

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BLC10G18XS-550AVTY Application Field and Working Principle

Introduction

BLC10G18XS-550AVTY is an N-channel enhancement-mode low-voltage Uniform Gate Threshold Field-Effect Transistor (UGT-FET). It is used in a variety of electronic applications, including radio frequency (RF) and digital signal processing (DSP). This particular device is well-suited for situations that require high-speed switching and low-power consumption. The device is constructed of an N-channel silicon gate, which is surrounded by a protective oxide layer. It provides an efficient way to control the flow of electrons between source and drain terminals.

Application Areas

BLC10G18XS-550AVTY is used in many areas. It is popular in transceivers, RF receivers, and RF power amplifiers due to its low gate voltage and high gain. These types of transistors are also used for analog signal processing, such as for low-noise amplifiers or for IF/VCO control. In addition, this type of device can be used in power circuits, such as for motion control, dc-to-dc converters, and switching power supplies.

Working Principle

The BLC10G18XS-550AVTY works by controlling the current flow between the source and drain terminals of the device. When a voltage is applied to the gate terminal, it polarizes the silicon gate, allowing the device to be turned “on” or “off”. When the voltage is applied to the gate terminal, the N-type silicon gate creates a barrier at the source-gate interface, preventing current flow. When the voltage is removed, the silicon gate is no longer polarized and current can flow freely between the source and drain terminals.

Advantages and Limitations

The BLC10G18XS-550AVTY has several advantages compared to other types of transistors. It is extremely efficient, with a low turn-on voltage, low power consumption, and high gain. In addition, this type of device also provides excellent temperature stability and low noise operation.Despite its advantages, the BLC10G18XS-550AVTY has a few limitations. For example, it is not compatible with power circuits that require higher voltage levels, and it may be limited in the output voltage range. Furthermore, the device is not designed to be used with RF applications that require higher power levels.

Conclusion

The BLC10G18XS-550AVTY is a versatile N-channel enhancement-mode low-voltage Uniform Gate Threshold Field-Effect Transistor. It is well-suited for many types of applications, including radio frequency (RF) and digital signal processing (DSP). The device provides excellent switching capability, low power consumption and high gain. However, it has a few limitations, such as its lack of compatibility with higher voltage power circuits and its limited output voltage range.

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