Allicdata Part #: | 1603-1111-ND |
Manufacturer Part#: |
BLC10G20LS-240PWTZ |
Price: | $ 53.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF MOSFET LDMOS 28V SOT1275-3 |
More Detail: | RF Mosfet LDMOS 28V 1.6A 1.805GHz ~ 1.995GHz 19.3d... |
DataSheet: | BLC10G20LS-240PWTZ Datasheet/PDF |
Quantity: | 60 |
1 +: | $ 48.48480 |
10 +: | $ 46.06120 |
100 +: | $ 41.51550 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.805GHz ~ 1.995GHz |
Gain: | 19.3dB |
Voltage - Test: | 28V |
Current Rating: | 1.4µA |
Noise Figure: | -- |
Current - Test: | 1.6A |
Power - Output: | 60W |
Voltage - Rated: | 65V |
Package / Case: | SOT1275-3 |
Supplier Device Package: | SOT1275-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BLC10G20LS-240PWTZ is a small-signal surface mount FET transistor with a unique design that makes it ideal for use in high frequency switching applications. The FET is especially well-suited for use in switched systems where low power consumption, high efficiency, and high switching frequency are important. This type of transistor is available in a variety of packages and can be used in circuits operating at any frequency up to 1GHz.
The BLC10G20LS-240PWTZ packs some unique features that distinguish it from other small-signal transistors. It has a power dissipation rate of 20 mW, making it ideal for low-power applications. It has low input and output capacitance values, which improves its efficiency and prevents distortion when used at high frequencies. Additionally, the FET has superior response time, meaning it can switch states quickly with minimal power. These features, combined with its small size, makes the BLC10G20LS-240PWTZ an ideal choice for high frequency switching applications such as in cell phones, remote home automation systems, and other similar applications.
The typical application for the BLC10G20LS-240PWTZ is in a PNP switching configuration. The collector and emitter terminals of the FET are connected to a higher voltage DC power supply. When a voltage applied to the gate terminal goes beyond the threshold voltage, the drain and source terminals are connected, allowing current to flow between them. By increasing or decreasing the gate voltage, the FET can be switched between ON and OFF states quickly and efficiently.
It is important to consider the important parameters of the BLC10G20LS-240PWTZ before using the FET in your circuit. The FET has an ON resistance of 2.3 ohms, a gate threshold voltage of 0.5V, and a reverse diode breakdown voltage of 8V. Additionally, the FET has a maximum power dissipation of 10 mW and a maximum drain current of 14mA. It is important to consider these parameters, as well as the voltage and current ratings of your circuit when designing with this FET.
In conclusion, the BLC10G20LS-240PWTZ is a small-signal FET transistor with a unique design that makes it well-suited for high frequency switching applications. It has a low power consumption rate and fast switching times, as well as low input and output capacitances to reduce distortion. While designing with this FET, it is important to consider its parameters, as well as the voltage and current ratings of the circuit.
The specific data is subject to PDF, and the above content is for reference
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