BLC10G22XS-550AVTZ

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The BLC10G22XS-550AVTZ is a 50 Volt, 10 Watt RF RF MOSFET from NXP. This small size and low cost power device offers excellent performance in high frequency applications from 800 MHz to 2.8 GHz including WCDMA and LTE. This device has a maximum drain current of 27 A and a maximum drain-source ON-state resistance of 5.8 mOhm.

The BLC10G22XS-550AVTZ is suitable for use in amplifiers, switches, converters, motor controllers, and other RF applications.

The BLC10G22XS-550AVTZ works by controlling the current flow between the source and the drain. This is done by varying the amount of voltage applied to an insulated gate. The gate acts like a switch which determines the amount of current that can pass to the drain. The amount of voltage required to turn the transistor "on" and "off" is determined by the voltage of the gate. This transistor can operate in either the enhancement or depletion mode.

In the enhancement mode, an increasing voltage applied to the gate will let more current flow between the source and the drain. When the gate voltage is below the threshold, no current can pass. This mode is usually used when an increase in current is required.

In the depletion mode, a decreasing voltage applied to the gate will let more current flow between the source and the drain. When the gate voltage is below the threshold, no current can pass. This mode is usually used when a decrease in current is required.

The gate voltage determines the gate-source voltage VGS and the gate-drain voltage VGD, which are used to limit the amount of current that can flow between the source and the drain. The gate-source voltage VGS also determines the voltage at which the MOSFET begins to operate as an amplifying device. This mode is known as the linear region. As the gate voltage increases, the current flowing between the source and the drain increases as well. This is the mode in which the transistor is most often used to amplify a signal. The gate-source voltage VGS can also be used to control the power output from the transistor.

The BLC10G22XS-550AVTZ is an N-channel RF MOSFET which is designed to operate in high frequency applications from 800 MHz to 2.8 GHz. This device operates in the enhancement or depletion mode and offers excellent performance in high frequency applications. This device has a maximum drain current of 27 A and a maximum drain-source ON-state resistance of 5.8 mOhm. The device is suitable for use in amplifiers, switches, converters, motor controllers and other RF applications.

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