BLC10G22XS-400AVTY Allicdata Electronics
Allicdata Part #:

BLC10G22XS-400AVTY-ND

Manufacturer Part#:

BLC10G22XS-400AVTY

Price: $ 51.72
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: BLC10G22XS-400AVT/SOT1258/REEL
More Detail: RF Mosfet LDMOS 28V 800mA 2.11GHz ~ 2.2GHz 17dB 40...
DataSheet: BLC10G22XS-400AVTY datasheetBLC10G22XS-400AVTY Datasheet/PDF
Quantity: 1000
100 +: $ 47.02500
Stock 1000Can Ship Immediately
$ 51.72
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.11GHz ~ 2.2GHz
Gain: 17dB
Voltage - Test: 28V
Current Rating: 2.8µA
Noise Figure: --
Current - Test: 800mA
Power - Output: 400W
Voltage - Rated: 65V
Package / Case: SOT-1258-4
Supplier Device Package: SOT1258-4
Description

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BLC10G22XS-400AVTY is a type of transistor and is categorized as a RF (radio frequency) MOSFET (metal oxide semiconductor field effect transistor). This type of transistor is used in numerous applications due to its reliable operation and versatility. It is used in antenna switching applications which require high performance and when a high power transmission is needed. In addition, they are also used in power amplifiers and mixing applications in radios, televisions, and other electronic devices.

BLC10G22XS-400AVTY transistors have an operating range of 4.5V to drain-source voltage (VDS) and 4.5V to gate-source voltage (VGS). They feature high sensitivity and outstanding linearity, making them well suited for use in higher frequency bands. The available integrated circuitry gives the transistor extra protection from electrical noise and external interference. These transistors are also RoHS compliant which makes them safe for use in a variety of applications.

The BLC10G22XS-400AVTY operating principle is based on the fact that current flows between two electrodes when a voltage is applied across them. In this case, the two electrodes are the source and the drain. A MOSFET transistor is a type of field effect transistor (FET) with the gate acting as a control element. In the BLC10G22XS-400AVTY, the gate voltage determines the operation of the transistor. When the gate is positive, the source is positively biased to the drain, allowing the current to flow from source to drain. When the gate is negative, the source is negatively biased to the drain, blocking the current and preventing it from flowing. The gate can also be used to regulate the amount of current that flows through the source and the drain.

This type of transistor is also used in other applications such as switching and amplifier circuits. They are often used in mixer or oscillator circuits where a higher frequency is needed. The BLC10G22XS-400AVTY also features low power consumption, making it ideal for battery-powered applications. Furthermore, these transistors are highly reliable and are capable of providing consistent performance over long periods of time.

The BLC10G22XS-400AVTY has been used in a number of different applications, ranging from antenna switching to power amplifiers. It is a reliable, versatile, and highly sensitive MOSFET transistor with an excellent linearity. The integrated circuitry gives it extra protection against noise and interference and its low power consumption makes it an ideal choice for battery-powered applications. With its high frequency operation and wide operating range, the BLC10G22XS-400AVTY is a great choice for any application that requires reliable and consistent performance.

The specific data is subject to PDF, and the above content is for reference

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