BLF4G10LS-120,112

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	920MHz ~ 960MHz
Gain:	19dB
Voltage - Test:	28V
Current Rating:	12A
Noise Figure:	--
Current - Test:	650mA
Power - Output:	48W
Voltage - Rated:	65V
Package / Case:	SOT-502B
Supplier Device Package:	SOT502B

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BLF4G10LS-120,112 Application Field and Working PrincipleThe BLF4G10LS-120,112 is an RF transistor manufactured by NXP, a leading semiconductor company. It is a type of field effect transistor specifically designed for radio frequency applications. The transistor features high frequencies, high gain, and low noise. The device is also capable of operating at temperatures up to 125 degrees Celsius and is extremely robust. The BLF4G10LS-120,112 is commonly used in applications such as communication transceivers, satellite communication systems, and security systems. It is also used in consumer applications such as cellular phones, wireless systems, and wireless network devices. The working principle of a field effect transistor is based on the principle of conductivity modulation. The transistor is made up of two p-type and n-type regions. As an electric current is applied, it modulates the conductivity of these regions and the effect is further amplified across the junction. This allows it to amplify weak signals that come in contact with it. The BLF4G10LS-120,112 is built on a unique combination of advanced manufacturing techniques, allowing for a wide range of applications in the highest frequency ranges. The transistor includes a double sided chip with a high gain, which helps to reduce noise and reduce the cost of the product. The power efficiency of the transistor is also superior because of its large output power. The device is also designed to be extremely reliable and can be used in a variety of different temperatures and environments. The transistor also has a wide temperature range and can be operated in temperatures ranging from -40 degrees Celsius to 125 degrees Celsius. The BLF4G10LS-120,112 is capable of operating in a wide range of frequencies. It operates in the Low Frequency (LF) range and can be used up to 4 GHz. Furthermore, the device is designed so that the harmonics generated are very low. This allows the device to reduce interference while simultaneously increasing the output power. To sum up, the BLF4G10LS-120,112 is a state-of-the-art high-performance and cost-effective RF transistor that is perfectly suited for a wide range of applications. The high reliability, wide temperature range, and low noise performance make it an ideal choice for any application requiring high performance and low cost. Additionally, its broad range of frequencies, high-gain performance, and wide temperature range make it an excellent choice for RF applications.

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