Allicdata Part #: | 568-2393-ND |
Manufacturer Part#: |
BLF4G20-110B,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 1.99GHZ SOT502A |
More Detail: | RF Mosfet LDMOS 28V 700mA 1.93GHz ~ 1.99GHz 13.5dB... |
DataSheet: | BLF4G20-110B,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.93GHz ~ 1.99GHz |
Gain: | 13.5dB |
Voltage - Test: | 28V |
Current Rating: | 12A |
Noise Figure: | -- |
Current - Test: | 700mA |
Power - Output: | 100W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502A |
Supplier Device Package: | LDMOST |
Base Part Number: | BLF4G20 |
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A BLF4G20-110B,112 is a type of transistor. It belongs to the Field-Effect Transistors (FETs) as well as Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) family, specifically in the Radio Frequency (RF) section. It has several applications, with its primary use being in the amplification or switching processes of high-frequency signals or analog signals above 1 kHz.
BLF4G20-110B,112 transistors are typically used for switching and amplifying circuits in amplifiers of television, computer, and cell phone applications, as well as for amplifying radio frequencies for broadcasting purposes. However, the transistors can also be used in other circuits not related to RF applications. They are usually employed in small-scale, low-power applications, but can also supply large currents up to 20 A in some cases.
How this transistor works is by using a voltage to control the flow of current. It utilizes an insulated channel which can either be a P-type channel where current is carried by holes (positive charge carriers) or an N-type channel where current is carried by electrons (negative charge carriers). The type of channel used depends on the type of MOSFET. The transistor is set up such that the bias voltage is applied to the drain, which is then applied to the channel in order to control the flow of current. When the voltage is increased beyond a certain level, the current is switched on or off, depending on the design.
BLF4G20-110B,112 transistors are usually formed on a silicon substrate, with multiple layers of silicon dioxide and metal gates forming the channels. The silicon substrate is usually surrounded by an insulating material such as silicon dioxide. The transistor is then packaged in a standard SMD package such as a Small Outline or Quad Flat No-Lead (QFN) package.
These transistors have several advantages over other types of transistors. They are relatively cheaper than bipolar junction transistors and can be switched faster than the latter. Furthermore, they are more resistant to electrical noise due to their higher insulation resistance, which leads to fewer errors in analog signals and radio frequencies. Lastly, they can also operate at higher temperatures and are more resistant to thermal variations.
The BLF4G20-110B,112 is a popular choice among engineers and hobbyists alike due to its many advantages. They are used in a wide range of applications, further contributing to their popularilty. This is further emphasized by their affordability, making them an all-around excellent choice for any type of circuit or application.
The specific data is subject to PDF, and the above content is for reference
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