BLF4G20-110B,112 Allicdata Electronics
Allicdata Part #:

568-2393-ND

Manufacturer Part#:

BLF4G20-110B,112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 1.99GHZ SOT502A
More Detail: RF Mosfet LDMOS 28V 700mA 1.93GHz ~ 1.99GHz 13.5dB...
DataSheet: BLF4G20-110B,112 datasheetBLF4G20-110B,112 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.93GHz ~ 1.99GHz
Gain: 13.5dB
Voltage - Test: 28V
Current Rating: 12A
Noise Figure: --
Current - Test: 700mA
Power - Output: 100W
Voltage - Rated: 65V
Package / Case: SOT-502A
Supplier Device Package: LDMOST
Base Part Number: BLF4G20
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A BLF4G20-110B,112 is a type of transistor. It belongs to the Field-Effect Transistors (FETs) as well as Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) family, specifically in the Radio Frequency (RF) section. It has several applications, with its primary use being in the amplification or switching processes of high-frequency signals or analog signals above 1 kHz.

BLF4G20-110B,112 transistors are typically used for switching and amplifying circuits in amplifiers of television, computer, and cell phone applications, as well as for amplifying radio frequencies for broadcasting purposes. However, the transistors can also be used in other circuits not related to RF applications. They are usually employed in small-scale, low-power applications, but can also supply large currents up to 20 A in some cases.

How this transistor works is by using a voltage to control the flow of current. It utilizes an insulated channel which can either be a P-type channel where current is carried by holes (positive charge carriers) or an N-type channel where current is carried by electrons (negative charge carriers). The type of channel used depends on the type of MOSFET. The transistor is set up such that the bias voltage is applied to the drain, which is then applied to the channel in order to control the flow of current. When the voltage is increased beyond a certain level, the current is switched on or off, depending on the design.

BLF4G20-110B,112 transistors are usually formed on a silicon substrate, with multiple layers of silicon dioxide and metal gates forming the channels. The silicon substrate is usually surrounded by an insulating material such as silicon dioxide. The transistor is then packaged in a standard SMD package such as a Small Outline or Quad Flat No-Lead (QFN) package.

These transistors have several advantages over other types of transistors. They are relatively cheaper than bipolar junction transistors and can be switched faster than the latter. Furthermore, they are more resistant to electrical noise due to their higher insulation resistance, which leads to fewer errors in analog signals and radio frequencies. Lastly, they can also operate at higher temperatures and are more resistant to thermal variations.

The BLF4G20-110B,112 is a popular choice among engineers and hobbyists alike due to its many advantages. They are used in a wide range of applications, further contributing to their popularilty. This is further emphasized by their affordability, making them an all-around excellent choice for any type of circuit or application.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BLF4" Included word is 10
Part Number Manufacturer Price Quantity Description
BLF404,115 Ampleon USA ... 0.0 $ 1000 RF FET NCHA 40V 11.5DB SO...
BLF4G10LS-120,112 NXP USA Inc 0.0 $ 1000 FET RF 65V 960MHZ SOT502B...
BLF4G10LS-160,112 NXP USA Inc 0.0 $ 1000 FET RF 65V 894.2MHZ SOT50...
BLF4G20-110B,112 NXP USA Inc 0.0 $ 1000 FET RF 65V 1.99GHZ SOT502...
BLF4G20LS-110B,112 NXP USA Inc 0.0 $ 1000 FET RF 65V 1.99GHZ SOT502...
BLF4G20LS-130,112 NXP USA Inc 0.0 $ 1000 FET RF 65V 1.99GHZ SOT502...
BLF4G20S-110B,112 NXP USA Inc 0.0 $ 1000 FET RF 65V 1.99GHZ SOT502...
BLF4G22LS-130,112 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.17GHZ SOT502...
BLF4G22S-100,112 NXP USA Inc 0.0 $ 1000 FET RF 65V 2.17GHZ SOT502...
BLF4G10-160,112 NXP USA Inc 0.0 $ 1000 TRANSISTOR RF LDMOS SOT50...
Latest Products
MRF6S21050LR3

FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...

MRF6S21050LR3 Allicdata Electronics
MRF6S18060NR1

FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...

MRF6S18060NR1 Allicdata Electronics
MRF1550NT1

FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...

MRF1550NT1 Allicdata Electronics
MRF8S21100HSR3

FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...

MRF8S21100HSR3 Allicdata Electronics
LET16060C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16060C Allicdata Electronics
LET16045C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16045C Allicdata Electronics