Allicdata Part #: | 568-2399-ND |
Manufacturer Part#: |
BLF4G22S-100,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.17GHZ SOT502B |
More Detail: | RF Mosfet LDMOS 28V 900mA 2.11GHz ~ 2.17GHz 13.5dB... |
DataSheet: | BLF4G22S-100,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.11GHz ~ 2.17GHz |
Gain: | 13.5dB |
Voltage - Test: | 28V |
Current Rating: | 12A |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 25W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
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The BLF4G22S-100,112 is a type of RF MOSFET transistor used in a wide variety of applications, including telecommunications, broadcasting and audio components. It is part of a family of transistors known as the BLF (Broadband Linear FET) series, which are used in several different applications. The BLF4G22S-100,112 is a specific type of RF MOSFET that operates at a higher frequency range than its counterparts.
The transistor\'s main application field is in telecommunications and broadcasting, as it can transmit signals over a long distance. It is also used in audio components such as amplifiers, preamplifiers and headphone amplifiers. The transistor can be used in both linear and non-linear applications. Additionally, it is capable of operating at both low and high temperatures.
The transistor\'s base consists of two metal-oxide semiconductor elements that are arranged in a cross arrangement. Its electrodes are typically made of gold or silver, and its body is made of silicon. The metal-oxide layer forms a junction between the source and the drain.
The way the transistor works is by passing current from the source to the drain. The current is modulated by the metal-oxide layers, which control the direction and magnitude of the current. This modulation process is known as carrier modulation, and it allows the transistor to function as an amplifier.
The BLF4G22S-100,112 is an incredibly reliable transistor, particularly in comparison to its predecessors. Its high power and low noise performance make it ideal for a range of industrial, commercial and consumer applications. It has a wide operating temperature range and is able to withstand a range of voltage levels. Additionally, its superior stability allows it to be used in a variety of applications, including high-powered amplifiers, preamplifiers and other audio components.
The BLF4G22S-100,112 is a reliable, high-performance RF MOSFET transistor. Its use in telecommunications, broadcasting and audio components makes it an ideal choice for many different applications. Its superior stability, high power and low noise performance make it an excellent choice for industrial and consumer devices.
The specific data is subject to PDF, and the above content is for reference
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