BLF4G22LS-130,112

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BLF4G22LS-130,112, a device from Murata, is a type of N-Channel Enhancement Mode Gallium Nitride (GaN) RF Field-Effect Transistor (FET). It is designed for use in high-efficiency microwave amplifier applications with high operating frequencies in the L-band frequency range.

Application field

BLF4G22LS-130,112 can be used in a wide variety of applications, such as in radar systems, base station amplifiers, and Wi-Fi systems. It is also ideal for use in automotive radars and high-efficiency 5G wireless backhaul applications. It has a maximum drain current of 21A, a power gain of 19.5 dB, and an output power of 21 W respectively.

Working principle

The GaN FET in BLF4G22LS-130,112 is based on electric field amplification. It operates by applying gate voltage to increase a thin conducting channel between the source and drain. This thin conducting channel is a so-called “field-effect” as electrons passing through it are pulled and pushed under a force of electromagnetic along with their magnetic fields generated by the electric discharge.

The source connection to the device is connected to a voltage source and that drives electrons from the source material to the channel. The drain is connected to a connection that pulls the device’s electrons out of the channel. Positive gate voltage is applied to the gate terminal of the device that draws the electrons towards the gate, thus increasing the conducting channel width with an increased current flow.

The electric field set up by the gate voltage is also used to initiate a “non-linear gain” of the device, which is the basis of high-frequency early micromachines like high power transmitters such as in mobile communication systems.

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