BLF4G20S-110B,112

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLF4G20S-110B,112 is a type of Field Effect Transistor (FET), related to both Metal-Oxide Semiconductor (MOSFET) and Radio Frequency (RF) technology. It is a high power N-channel transistor designed for use at lower switching frequencies, and operates with drain-source voltages of up to 50V.

FETs and MOSFETs are two basic types of transistors. FETs (Field Effect Transistors) use electric fields to control the flow of current by creating a voltage between two terminals: the gate and the source. MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) use an oxide layer as an insulating layer between the gate and the source. This layer prevents current from passing through the gate. To activate the transistor, electric fields are used to remove the charge from the gate, allowing current to flow from the source to the drain. RF transistors are specialized FETs and MOSFETs designed for the higher frequency signals used in radio frequency applications. They are designed to be small, efficient, and highly reliable. The BLF4G20S-110B,112 is an example of this type of transistor. It is designed to provide high power handling capabilities in lower frequency applications. This allows it to be used in RF amplifiers, power supplies and switchgear, as well as other applications requiring high power handling and low voltage operation.

The BLF4G20S-110B,112 integral structure and process technologies make it a powerful and highly reliable transistor. It features an integrated connection structure, where the gate and drain connections are both directly connected to the die, allowing for low impedance and reduced capacitance. The integrated protection devices include a forward gate bias guard, gate-drain shorting, and temperature sensor and monitoring circuitry. This provides better device protection against voltage and temperature effects.

The BLF4G20S-110B,112 is also designed to be extremely efficient. It has a very low on-resistance and high gain, allowing for efficient operation. Its design also includes a built-in current limit feature, which prevents the transistor from exceeding a certain current level. This protects the device from overloads and also helps to ensure efficient operation.

The versatility of the BLF4G20S-110B,112 makes it an ideal choice for a variety of applications. It is used in broadband and high-bandwidth amplifiers, high-stability phase shifters, power supplies, and switchgear, among other applications. It is also used in radio frequency switching, helping to reduce power loss, increase system reliability, and extend component life.

In summary, the BLF4G20S-110B,112 is a type of Field-Effect Transistor (FET) related to both Metal-Oxide Semiconductor (MOSFET) and Radio Frequency (RF) technology. This device is designed for use at lower switching frequencies and is capable of drain-source voltages of up to 50V. Its integrated protection and built-in current limit feature makes it highly reliable and efficient. In addition, it is versatile enough to be used in a broad range of applications, from broadband and high-bandwidth amplifiers, to power supplies and switchgear.

The specific data is subject to PDF, and the above content is for reference