BR25010N-10SU-2.7

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	1Kb (128 x 8)
Clock Frequency:	3MHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Base Part Number:	BR25010

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BR25010N-10SU-2.7 is a type of memory which is widely used in many applications. It is a 64-Mbit (8megabyte) dual-in-line memory module (DIMM) with two-ranked Dynamic Random Access Memory (DRAM). The two ranks provide double the storage capability compared to single rank modules, making it an ideal choice for applications with high memory requirements.The module consists of four 1M x 16 bit banks, totaling 64Mbits of DRAM. Each bank can be accessed independently, making the module suitable for multiprocessing systems. The module has a refresh rate of 7.8us and supports a maximum access time of 25ns. The module is capable of running at bus speeds from 66MHz to 200MHz.The BR25010N-10SU-2.7 supports Error Correction Code (ECC) and is hot-pluggable. The module is also capable of being disconnected and reconnected while the system is being powered up, so that upgrades can be made without a full system reset.The BR25010N-10SU-2.7 can be used in a variety of applications. It is well-suited for servers, workstations, and networking equipment, as well as embedded systems that require large amounts of memory. The module is suitable for a variety of operating systems, including Windows and Linux.The BR25010N-10SU-2.7 uses a synchronous DRAM (SDRAM) memory architecture. SDRAM is a type of memory that operates with a clock frequency, which is synchronized to the clock of the system in which it is installed. This allows for faster data access, since the data can be fetched as soon as it is available.The BR25010N-10SU-2.7 employs a four bank organization, which allows the memory controller to access four banks simultaneously. This results in increased performance, since data can be fetched from each of the four banks in the same clock cycle. The module also supports the Dual-Polling Burst (DPB) mode, which allows the memory controller to fetch eight data words from each of the banks simultaneously.To ensure data integrity, the BR25010N-10SU-2.7 uses Error Correction Code (ECC). ECC is used to detect and correct errors in the data being stored in the module. The module also supports programmable CAS latency, which allows the system to optimize the speed of access to the memory.In conclusion, the BR25010N-10SU-2.7 is a high-performance, high-capacity memory module that can be used in a variety of applications. Its dual rank architecture provides increased storage capability and its ECC support ensures data integrity. Its hot pluggability and programmable CAS latency make it ideal for use in servers, workstations and embedded systems.

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