BR25S640FJ-WE2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BR25S640FJ-WE2 Application Field and Working Principle

BR25S640FJ-WE2 is a type of non-volatile memory categorized in the Integrated Circuit (IC) memory family. It is a part of a comprehensive family of robust ferroelectric Random Access Memory (FRAM) products that are growing in popularity as memory solutions in a wide variety of applications. The BR25S640FJ-WE2 is a high-performance, battery-backed FRAM with reliable non-volatile write protection which offers a combination of fast read and write times, high endurance, low-voltage operation and a wide industry standard Temperature Range.

Features

The BR25S640FJ-WE2 has the following features:

• Low-voltage operation - 1.8 to 3.6V
• High Endurance - 1 trillion program/erase cycles
• 8K words x 8-bit organization
• Industry standard temperature range -40C to 85C
• Non-volatile write protection
• Fast write and read access times
• It is programmable at full speed

Applications

Due to its robust features and wide Temperature Range, the BR25S640FJ-WE2 is used in a variety of applications such as:

• Automotive systems
• GPS systems
• Medical applications
• Power management applications
• Network systems
• Networking and communication systems
• Consumer electronics
• Industrial automation

Working Principle

The BR25S640FJ-WE2 is a non-volatile memory that stores data in a device\'s memory even when the power is turned off. The device works by using a ferroelectric material to store information in the form of electrical polarity, which is a positive or negative charge. The data is stored in a "memory cell" and can be read and written to like normal memory.

The BR25S640FJ-WE2 also provides reliable non-volatile write protection, which prevents writing or erasing data from the memory. This ensures that data is not lost in the case of a power outage or other unexpected event. Additionally, the device has the ability to program at full speed, meaning the data can be written to the device at speeds of up to 33 MHz.

Taken together, these features make the BR25S640FJ-WE2 an ideal solution for a variety of memory applications, such as automotive and networking systems.

The specific data is subject to PDF, and the above content is for reference