Allicdata Part #: | BR25G128FVT-3GE2TR-ND |
Manufacturer Part#: |
BR25G128FVT-3GE2 |
Price: | $ 0.29 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 128K SPI 20MHZ 8TSSOP |
More Detail: | EEPROM Memory IC 128Kb (16K x 8) SPI 20MHz 8-TSSO... |
DataSheet: | BR25G128FVT-3GE2 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.26654 |
6000 +: | $ 0.25786 |
15000 +: | $ 0.24935 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 128Kb (16K x 8) |
Clock Frequency: | 20MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.6 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP-B |
Description
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BR25G128FVT-3GE2 Memory
BR25G128FVT-3GE2 is a nonvolatile memory module that operates electrically without power. This type of memory is resistant to heat, humidity, vibration and mechanical shock and is considered a very reliable nonvolatile memory solution. It is used to store data in various applications where power failure is a concern. In addition to its nonvolatile feature, the BR25G128FVT-3GE2 provides users with a flexible interface offering various data speeds.The BR25G128FVT-3GE2 memory module provides a storage capacity of 128 gigabytes, and comes in two different package sizes: a very small two-ball or a verylarge eight-ball package. The two-ball package is the smallest option and is perfect for small embedded applications such as a laptop or a PDA. The eight-ball package is ideal for larger applications, such as servers and storage area networks.BR25G128FVT-3GE2 memory module uses a NAND Flash controller and offers data rates up to 85 MB/s. It supports a high-performance, asynchronous interface and also allows for reconnection on-the-fly. This memory module has an auto-suspend mode so that it does not draw power when it is idle, thereby conserving energy.The working principle of the BR25G128FVT-3GE2 memory module is based on charge transfer through an array of transistor gate dielectric layers. This layer is comprised of a floating gate structure. The memory cell is placed between the source and drain and an electric field is applied to the floating gate for programming and erasing memory.The BR25G128FVT-3GE2 memory module is commonly used in many applications that require reliable data storage, such as medical and industrial, automotive, military and aerospace, consumer electronics, and smart meters. It is also widely used in mobile devices and embedded systems, providing a large amount of data storage with the convenience of a single flash storage module.With its reliable storage capability and wide range of package sizes, the BR25G128FVT-3GE2 memory module is a great choice for applications that require nonvolatile memory solutions. Its unique nonvolatile feature provides users with the option of storing data without the need for an energy source, allowing users to safely store data despite power failure or other unforeseen circumstances.The specific data is subject to PDF, and the above content is for reference
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