BR25A512F-3MGE2

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	512Kb (64K x 8)
Clock Frequency:	10MHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	SPI
Voltage - Supply:	2.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.173", 4.40mm Width)
Supplier Device Package:	8-SOP

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BR25A512F-3MGE2 Memory

BR25A512F-3MGE2 (BR25A512F) is a high-speed, low-power SRAM device, with a 3 megabit (Mbit) capacity. It is a nonvolatile, static random access memory (SRAM) device, typically used for high-speed data transfer operations. It operates from 1.5V to 3.3V and can support a wide range of data transfer rates.BR25A512F has an organized architecture and supports a wide variety of data transfer formats. The device can be organized as 5,12 and 16 bit words, allowing it to be used as a data storage device as well as a data buffer. It also supports multiple access modes such as continuous access (CA) and burst mode access (BMA). This makes it suitable for many high-speed applications.In addition to its high speed, low power and multi-access support, BR25A512F offers advanced error detection and correction capabilities. It is designed to provide a total of four parity bits and has 8 bits of error detection in its data stream. These features ensure that the data stored in the device is accurate and reliable.BR25A512F is suitable for multiple applications such as entertainment, automotive, industrial, medical and consumer electronics. It is also used for data collection and retrieval, weather forecasting, air traffic control and many other applications.BR25A512F-3MGE2 is the enhanced version of BR25A512F. It is the first non-volatile SRAM with improved power management, increased efficiency and improved data integrity. This device is designed and optimized to enable the use of multiple access modes and to optimize the performance of data transfer operations. It also supports up to eight addresses per access which allows it to move more data with less transfer cycles.The working principle of BR25A512Futilizing an internal memory array is to read and write a certain number of bits when the chip is enabled. The chip uses two different types of addresses to access the memory array: virtual memory addresses and physical memory addresses. Virtual memory addresses are the addresses that the chip uses to identify the desired address in a physical RAM array. Physical memory addresses are the addresses of the array that the chip actu

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