Allicdata Part #: | BR25A512FJ-3MGE2TR-ND |
Manufacturer Part#: |
BR25A512FJ-3MGE2 |
Price: | $ 0.76 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | 105°C OPERATION SPI BUS EEPR |
More Detail: | EEPROM Memory IC 512Kb (64K x 8) SPI 10MHz 8-SOP-... |
DataSheet: | BR25A512FJ-3MGE2 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.68845 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 512Kb (64K x 8) |
Clock Frequency: | 10MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP-J |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BR25A512FJ-3MGE2 is a Memory device from Renesas Electronics Corporation, which is a globally renowned semiconductor and electronics component manufacturer. It is a 512 kbit non-volatile Static RAM, which means that data can be stored in its memory even when the power supply is switched off. The device is available in a 52 pin plastic leaded chip carrier (PLCC) package. As a non-volatile static RAM, BR25A512FJ-3MGE2 is suitable for use in applications where the data must be retained even when the power supply is turned off.
BR25A512FJ-3MGE2 has several useful features that make it suitable for a wide range of applications. It has a wide operating voltage range of 1.8V to 6.0V and provides a low power consumption of just 3.0 mA when operating at a voltage of 5V. The device also features fast access times of just 10 ns and a maximum operating frequency of 25 MHz. The device is also capable of driving 50 ohm loads, allowing it to be used in a variety of applications.
The BR25A512FJ-3MGE2 is an ideal Memory device for applications such as system backup and personal digital assistant (PDA) memory storage. It can also be used in applications that require non-volatile memory storage, such as industrial applications and automotive systems. Additionally, it can be used in applications such as bar code scanning, as well as in any other application where high speed data access is required.
The working principle behind the BR25A512FJ-3MGE2 is relatively straightforward. Data is stored in its memory cells, and the device is designed with a sophisticated multi-bit architecture to ensure maximum access speed and reliability. The device is also designed with an on-chip data write protection, which allows data to be safely stored in the event of a power failure.
Renesas has also put a number of measures in place to ensure the reliability of the BR25A512FJ-3MGE2, including a built-in ECC (error correction code) feature and a built-in power-fail detection circuit that can detect when the power is in danger of failing and will signal this to the system in time for it to take the appropriate action. Furthermore, the device also includes a reversible locked-out security chip, which ensures that only authorized personnel can access the device’s data.
In summary, the BR25A512FJ-3MGE2 is a reliable, non-volatile static RAM device with features that make it suitable for a wide range of applications. Its wide operating voltage range and low power consumption make it ideal for low-power applications such as PDA memory storage, while its fast access times and multi-bit architecture make it suitable for applications requiring rapid data access. Its built-in features such as ECC, power-fail detection, and security chip ensure that data is kept safe and secure. The BR25A512FJ-3MGE2 is an ideal choice for both consumer and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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