Allicdata Part #: | BR25L160F-WE2TR-ND |
Manufacturer Part#: |
BR25L160F-WE2 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 16K SPI 5MHZ 8SOP |
More Detail: | EEPROM Memory IC 16Kb (2K x 8) SPI 5MHz 8-SOP |
DataSheet: | BR25L160F-WE2 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 16Kb (2K x 8) |
Clock Frequency: | 5MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP |
Base Part Number: | BR25L160 |
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BR25L160F-WE2 is a dynamic random access memory (DRAM) used in various electronic devices for storing data. It is used in many different applications fields, such as automotive, Scientific/Medical, and Home Electronics/Networking/Communications industries. BR25L160F-WE2 features 16-Mbit (1Mb x 16), 5V cycle VDD power supply, 32-pin SOJ-type package, and 256K words (32K words x 8-bits) organization.
The BR25L160F-WE2 works on the basis of dynamic random access memory (DRAM) technology. DRAMs are memory devices where the data must be refreshed periodically or it will be lost. This means that the memory is not retained when the power is removed. DRAMs store each data bit on a capacitor that is periodically refreshed to ensure the data is not lost. DRAMs operate in a read/write cycle, where after a data is read from a memory location, the memory cell is "refreshed" with the data from its previous state so it can be retained. The time needed to refresh a DRAM cell is known as a "cycle time", which is typically longer than the time needed to write or read the data.
The BR25L160F-WE2 has a cycle time of 133 ns, which is short enough for it to be suitable for many different applications. The device is designed to operate on a 5V cycle VDD power supply and has a 32-pin SOJ-type package. It is organized into 256K words (32K words x 8-bits). Its maximum read and write cycle times are 20/10ns, and its maximum access time is 55ns. It also has an on-chip array of bus accelerators which allows high-speed access to the DRAM.
BR25L160F-WE2\'s features and cycle time make it a suitable choice for a wide range of applications. It can be used in automotive electronics for engine control systems, in communications and networking for digital switching, and in medical and scientific applications for instrumentation and digital signal processing. It can also be used in consumer home electronics for digital picture frames and video game consoles. Its features such as fast access time and low power consumption make it a popular choice for modern electronic devices that require memory.
In conclusion, BR25L160F-WE2 is a dynamic random access memory (DRAM) device used in various electronics applications. It is organized into 256K words (32K words x 8-bits) and has a 133ns cycle time. It is designed to run on a 5V cycle VDD power supply and has a 32-pin SOJ-type package. Its features such as low power consumption, fast access time, and on-chip bus accelerators make it ideal for automotive, Scientific/Medical, and Home Electronics/Networking/Communications industries.
The specific data is subject to PDF, and the above content is for reference
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