Allicdata Part #: | BR93G46FJ-3AGTE2TR-ND |
Manufacturer Part#: |
BR93G46FJ-3AGTE2 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | MICROWIRE BUS 1KBIT(64X16BIT) EE |
More Detail: | EEPROM Memory IC 1Kb (64 x 16) SPI 3MHz 8-SOP-J |
DataSheet: | BR93G46FJ-3AGTE2 Datasheet/PDF |
Quantity: | 2500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 1Kb (64 x 16) |
Clock Frequency: | 3MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP-J |
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The BR93G46FJ-3AGTE2 is a type of memory made by Hitachi, and it is widely used in all types of embedded systems. This type of memory is widely used because of its reliable performance, affordability and low power consumption. In particular, it is widely used in medical electronics, industrial, automotive, and military applications.
The BR93G46FJ-3AGTE2 offers two types of memory: SRAM and DRAM. SRAM stands for Static Random Access Memory, while DRAM stands for Dynamic Random Access Memory. SRAM is faster and more expensive than DRAM, while DRAM is slower and cheaper. The BR93G46FJ-3AGTE2 can hold up to 64MB of SRAM and 256MB of DRAM.
As far as its working principle is concerned, the BR93G46FJ-3AGTE2 uses a combination of transistor and capacitor technology to store data. The transistor acts as a switch to control the flow of electrons, while the capacitor is used to store the data. The transistors are arranged in a memory cell, each of which can store one bit of data. A memory cell consists of four transistors connected in an inverted pyramid configuration.
When a memory cell is accessed, a voltage is applied to electrodes connected to the transistors. This voltage is used to control the flow of electrons in the memory cell, which in turn controls the state of the bits in the memory cell. The transistors control the current flow in the memory cell, and this current is used to read and write data. The transistors are also used to control the operation of the memory chip.The BR93G46FJ-3AGTE2 is also designed to be able to work in both normal read and write operations, as well as self-refresh so that the data remains stored even when the power is not applied. It also has an error correction code that can detect and correct any errors in the data.
In conclusion, the BR93G46FJ-3AGTE2 is a type of memory that is widely used in all types of embedded systems. It is reliable, affordable, and low power consumption. It is made up of transistors and capacitors in order to store data, and can be used for both normal read and write operations. It also has an error correction code to help detect and correct any errors in the data. In short, it is an ideal memory choice for a wide range of embedded applications.
The specific data is subject to PDF, and the above content is for reference
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