BR93L66RF-WE2 Allicdata Electronics
Allicdata Part #:

BR93L66RF-WE2TR-ND

Manufacturer Part#:

BR93L66RF-WE2

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 4K SPI 2MHZ 8SOP
More Detail: EEPROM Memory IC 4Kb (256 x 16) SPI 2MHz 8-SOP
DataSheet: BR93L66RF-WE2 datasheetBR93L66RF-WE2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 16)
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Base Part Number: BR93L66
Description

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BR93L66RF-WE2 Memory Application Field and Working Principle

BR93L66RF-WE2 is a memory component made by Rohm Semiconductor, and is primarily used in automotive and industrial applications. The memory component is designed to store and transmit data at an ultra-fast speed over a short distance. It has several features that make it well-suited for automotive memory applications, including an operating temperature range of -45 to +85°C and low power consumption.

The BR93L66RF-WE2 memory component has two different memory types: NOR flash and FRAM. NOR flash is a type of non-volatile memory that stores volatile data, such as program code, without the need for power. The component is also capable of storing non-volatile data such as configuration and calibration settings. FRAM is another type of non-volatile memory and can store more data than NOR flash but with much lower power consumption.

This memory component is composed of a semiconductor that consists of many layers of thin film that are responsible for storing and retrieving data. The thin film is divided into two layers: the memory cell layer and the I/O layer. When power is applied to memory, the cells in the memory cell layer are programmed, forming a pattern that is then transferred to the I/O layer. This pattern is then written to the output of the memory component. The data is transferred to the output using both logic and analog circuits, depending on the memory type.

In addition to its NOR flash and FRAM types of memory, the BR93L66RF-WE2 memory component supports data processing with CRC (Cyclical Redundancy Check) and ECC (Error Correcting Code) algorithms. These algorithms help to check and verify data integrity, ensuring that any data sent over a short distance, such as in automotive applications, is transmitted accurately.

The BR93L66RF-WE2 memory component is designed to reduce power consumption and extend the life of the device. It has an ultra-low power management mode that allows the device to enter a low-power state while still carrying out data processing, thus conserving the device’s power. Furthermore, the component has enhanced write speed and lower write latency, allowing it to perform data processing more quickly.

Overall, the BR93L66RF-WE2 memory component is well-suited for automotive and industrial applications as it offers features such as ultra-fast data transmission, enhanced write speed, low power consumption, and error-checking mechanisms. The component is also able to operate over a wide temperature range, from -45 to +85°C, making it capable of performing in a variety of harsh environments.

The specific data is subject to PDF, and the above content is for reference

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