Allicdata Part #: | BR93G86FJ-3GTE2TR-ND |
Manufacturer Part#: |
BR93G86FJ-3GTE2 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 16K SPI 3MHZ 8SOPJ |
More Detail: | EEPROM Memory IC 16Kb (2K x 8, 1K x 16) SPI 3MHz ... |
DataSheet: | BR93G86FJ-3GTE2 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 16Kb (2K x 8, 1K x 16) |
Clock Frequency: | 3MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP-J |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BR93G86FJ-3GTE2 is a component of the memory family. It is typically used for applications such as industrial automation, communications, network control and digital video processing. As such, the BR93G86FJ-3GTE2 is ideal for storing, interpreting and managing data.
At the core of the BR93G86FJ-3GTE2 is its working principle, which is based on cell-based storage. The cell-based storage consists of millions of cells which each store one bit of information, either a 0 or 1. This information is referred to as binary data. The cells are arranged in a grid and the contents of the cells can be read, written, erased or moved.
These operations are all done with the help of circuitry, controlled by electric signals. A write operation, for example, involves the activation of cells by sending electric pulses into them. This causes a magnetic change in the cells, resulting in data being written. Once written, the data is stored in the cells until it is either erased or modified. In order to modify the data stored in the cells, a read-modify-write operation is performed.
The BR93G86FJ-3GTE2’s operations are further enhanced through additional mechanisms, such as error correction, error detection and refresh. Error correction ensures that any errors in the data are corrected before they are written into the cells while error detection checks to see if the data stored in the cells is valid. Refresh methods ensure that any stored data is not lost due to environmental or electrical noises.
The BR93G86FJ-3GTE2 is a versatile device and is often used for a variety of applications. From embedded systems to communications, the BR93G86FJ-3GTE2 often finds its place in a multitude of systems. In addition, the BR93G86FJ-3GTE2 is relatively cost effective, making it an attractive option for many customers.
In conclusion, the BR93G86FJ-3GTE2 is an important part of the memory family. Its cell-based storage mechanism, combined with additional mechanisms such as error correction, error detection and refresh, makes it an ideal choice for many applications. The BR93G86FJ-3GTE2 is also cost-effective, making it an attractive option for many customers.
The specific data is subject to PDF, and the above content is for reference
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