Allicdata Part #: | BR93G46FJ-3GTE2TR-ND |
Manufacturer Part#: |
BR93G46FJ-3GTE2 |
Price: | $ 0.11 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | MICROWIRE BUS 1KBIT(64X16BIT) EE |
More Detail: | EEPROM Memory IC 1Kb (64 x 16) SPI 3MHz 8-SOP-J |
DataSheet: | BR93G46FJ-3GTE2 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.09728 |
5000 +: | $ 0.08936 |
12500 +: | $ 0.08782 |
25000 +: | $ 0.08573 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 1Kb (64 x 16) |
Clock Frequency: | 3MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP-J |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BR93G46FJ-3GTE2 are the general-purpose DRAM and high temperature DRAM chips made by Samsung Electronics, belonging to the memory device category.This chip is an 8 Mbit DRAM, forming a 9.3ns single cycle access memory with a parallel interface. It has anti-static, anti-attrition and other characteristics and can work stably in harsh and dynamic environment.
Application Field
This chip is usually used in communications, computer control, display control and other fields. In communications, it can be used to support GSM and GPRS communications. In computer control, it is often used as the main memory, such as the system RAM. In terms of display control, it can be used as display RAM, such as LCD and LED display device\'s RAM.Working Principle
The working principle of BR93G46FJ-3GTE2 is similar to the general memory device. It uses a tiny capacitor and a tiny transistor to record a bit of data. The capacitor can store and release electricity to represent 0 and 1 respectively. The two capped ends are connected to the transistor, and between them is the read and write line, so that when the capacitor releases electricity, the transistor will be turned on, and then the state of 0 and 1 can be written or read.The controller of BR93G46FJ-3GTE2 can definitely determine the data flow of this chip. It serves as the bridge between the memory and the outside. Through a series of instructions set by the controller, the memory writes and reads data in the correct sequence, which realized the whole process of writing and reading.In conclusion, BR93G46FJ-3GTE2 is a new type of memory device developed by Samsung Electronics with higher memory density and better performance. With its wide application scope and reliable performance, it will be favored by the consumers.The specific data is subject to PDF, and the above content is for reference
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