BR93G76NUX-3BTTR Integrated Circuits (ICs) |
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Allicdata Part #: | BR93G76NUX-3BTTR-ND |
Manufacturer Part#: |
BR93G76NUX-3BTTR |
Price: | $ 0.14 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 8K SPI VSON008X2030 |
More Detail: | EEPROM Memory IC 8Kb (512 x 16) SPI 3MHz VSON008X... |
DataSheet: | BR93G76NUX-3BTTR Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.12591 |
8000 +: | $ 0.12312 |
12000 +: | $ 0.12099 |
28000 +: | $ 0.11812 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 8Kb (512 x 16) |
Clock Frequency: | 3MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-UFDFN Exposed Pad |
Supplier Device Package: | VSON008X2030 |
Base Part Number: | BR93G76 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is one of the essential components of a modern computer system. It is used to store data and instructions which will be used by the processor to execute various tasks. The BR93G76NUX-3BTTR is an example of such a type of memory and its application field and working principle will be discussed in this article.
The BR93G76NUX-3BTTR is a type of static RAM (SRAM) memory that is composed of n-channel MOSFETs,p-channel MOSFETs and diodes, which are arranged in a 6-Transistor cell (6T) array. This type of memory is extremely fast and power efficient, making it an ideal choice for applications such as cache memory, register files and small data buffers in embedded systems. It is also used in applications such as high-end gaming systems and digital signal processing (DSP).
The working principle of the BR93G76NUX-3BTTR involves two types of MOSFETs, namely p-channel and n-channel transistors. The p-channel MOSFETs act as the access devices while the n-channel MOSFETs form the bit line drivers. The diodes are connected between the gates of the n-channel MOSFETs and the Vcc and Vss supply terminals. When a voltage is applied to either Vcc or Vss, a current flows through the diodes and the n-channel transistors. This causes the transistors to conduct and turn on, generating a logic level at their output.
The SRAM cells are then arranged into a 6T array, comprising three n-channel transistors and three p-channel MOSFETs for each SRAM cell. Each SRAM cell is connected to a separate row of the 6T array, so that each SRAM cell can be accessed independently. The 6T array is then connected to a network of address and data lines, so that data can be read and written to the SRAM cells in the array.
The BR93G76NUX-3BTTR is one of the fastest and most power-efficient SRAM solutions available. It has a wide range of applications, such as cache memory, register files and data buffers in embedded systems. It is also used as part of high-end gaming systems and digital signal processing (DSP). The high speed and power efficiency make it an ideal choice for these types of applications.
In conclusion, the BR93G76NUX-3BTTR is a type of static RAM (SRAM) memory that is composed of n-channel MOSFETs, p-channel MOSFETs and diodes, which are arranged in a 6-Transistor cell (6T) array. It is extremely fast and power efficient, making it an ideal choice for applications such as cache memory, register files and small data buffers in embedded systems. It is also used in applications such as high-end gaming systems and digital signal processing (DSP).
The specific data is subject to PDF, and the above content is for reference
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