BR93L46RF-WE2 Allicdata Electronics

BR93L46RF-WE2 Integrated Circuits (ICs)

Allicdata Part #:

BR93L46RF-WE2TR-ND

Manufacturer Part#:

BR93L46RF-WE2

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 1K SPI 2MHZ 8SOP
More Detail: EEPROM Memory IC 1Kb (64 x 16) SPI 2MHz 8-SOP
DataSheet: BR93L46RF-WE2 datasheetBR93L46RF-WE2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Base Part Number: BR93L46
Description

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Memory - BR93L46RF-WE2 application field and working principle

BR93L46RF-WE2 is a specific type of memory. It is used in a variety of electronic devices, including computers, digital cameras, and other digital devices that require memory storage. It is a combination of ROM and EEPROM, and it is essentially a non-volatile, electrically erasable and programmable memory. This type of memory has many useful applications in different fields.

Application Fields

BR93L46RF-WE2 memory has some excellent characteristics that make it ideal for use in many applications. It is commonly used in industrial systems, embedded applications, medical devices, security systems and more. It is also used in data loggers, Internet of Things (IoT) devices, and even automotive applications. This type of memory is highly reliable and is often used for long-term storage.

Working Principle

The structure of BR93L46RF-WE2 memory consists of three layers: the top layer is comprised of a silicon chip that is etched with the memory cell array, while the bottom two layers are made of metal. These three layers are electrically connected to each other by means of tunneling. When a voltage is applied to the memory cell, the electrons tunnel through the insulation layers and change the resistance between the layers. This change in resistance can be detected and used to store data.

In addition, the memory cell can also be programmed. This is done by applying electric pulses to the memory cell. When the electric pulse is applied, the electrons are able to tunnel to the opposite surface, thus writing data to the memory cell. This programming method is fast and convenient, and allows for quick data storage.

When reading from the memory cell, the electrons again tunnel through the layers. This time, the tunneling of electrons creates a resistance change which is detected by the memory cell reader. This change in resistance is then used to read the stored data.

BR93L46RF-WE2 memory is a reliable and efficient type of memory which can be used in a variety of applications. Its combination of ROM and EEPROM makes it a versatile memory solution that is fast and efficient. Its programming and reading methods make it a good choice for data storage, and its reliability makes it an ideal choice for long-term storage.

The specific data is subject to PDF, and the above content is for reference

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