BR93L46RF-WE2 Integrated Circuits (ICs) |
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Allicdata Part #: | BR93L46RF-WE2TR-ND |
Manufacturer Part#: |
BR93L46RF-WE2 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 1K SPI 2MHZ 8SOP |
More Detail: | EEPROM Memory IC 1Kb (64 x 16) SPI 2MHz 8-SOP |
DataSheet: | BR93L46RF-WE2 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 1Kb (64 x 16) |
Clock Frequency: | 2MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP |
Base Part Number: | BR93L46 |
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Memory - BR93L46RF-WE2 application field and working principle
BR93L46RF-WE2 is a specific type of memory. It is used in a variety of electronic devices, including computers, digital cameras, and other digital devices that require memory storage. It is a combination of ROM and EEPROM, and it is essentially a non-volatile, electrically erasable and programmable memory. This type of memory has many useful applications in different fields.
Application Fields
BR93L46RF-WE2 memory has some excellent characteristics that make it ideal for use in many applications. It is commonly used in industrial systems, embedded applications, medical devices, security systems and more. It is also used in data loggers, Internet of Things (IoT) devices, and even automotive applications. This type of memory is highly reliable and is often used for long-term storage.
Working Principle
The structure of BR93L46RF-WE2 memory consists of three layers: the top layer is comprised of a silicon chip that is etched with the memory cell array, while the bottom two layers are made of metal. These three layers are electrically connected to each other by means of tunneling. When a voltage is applied to the memory cell, the electrons tunnel through the insulation layers and change the resistance between the layers. This change in resistance can be detected and used to store data.
In addition, the memory cell can also be programmed. This is done by applying electric pulses to the memory cell. When the electric pulse is applied, the electrons are able to tunnel to the opposite surface, thus writing data to the memory cell. This programming method is fast and convenient, and allows for quick data storage.
When reading from the memory cell, the electrons again tunnel through the layers. This time, the tunneling of electrons creates a resistance change which is detected by the memory cell reader. This change in resistance is then used to read the stored data.
BR93L46RF-WE2 memory is a reliable and efficient type of memory which can be used in a variety of applications. Its combination of ROM and EEPROM makes it a versatile memory solution that is fast and efficient. Its programming and reading methods make it a good choice for data storage, and its reliability makes it an ideal choice for long-term storage.
The specific data is subject to PDF, and the above content is for reference
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