Allicdata Part #: | BR93L56RFVM-WTR-ND |
Manufacturer Part#: |
BR93L56RFVM-WTR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 2K SPI 2MHZ 8MSOP |
More Detail: | EEPROM Memory IC 2Kb (128 x 16) SPI 2MHz 8-MSOP |
DataSheet: | BR93L56RFVM-WTR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 2Kb (128 x 16) |
Clock Frequency: | 2MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) |
Supplier Device Package: | 8-MSOP |
Base Part Number: | BR93L56 |
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Memory
The BR93L56RFVM-WTR is a type of memory which has a wide range of applications and a clear working principle. It is primarily used in industrial and domestic robotics, allowing them to store large amounts of data and make decisions. In addition, it can be used as memory in various electronic applications.
The BR93L56RFVM-WTR is an integrated circuit integrated into the application circuit. It uses a static random access memory (SRAM) architecture that stores data at individual cells by using a transistor switch. This architecture is often used for storage in computers, mobile devices, embedded systems, medical instruments and even for industrial automation. Because of its low power consumption and high memory capacity, the BR93L56RFVM-WTR is also used in robotics to store large amounts of data.
The working principle of the BR93L56RFVM-WTR is based on the principle of static RAM (SRAM). SRAM is a form of random-access memory in which a memory cell is composed of a flip-flop, made up of two transistors and a capacitor. When a voltage is applied to the cell, one transistor switches on and the other switches off. At the same time, the capacitor stores the charge and thus the state of the cell is determined.
In the BR93L56RFVM-WTR, data is written and retrieved by changing the state of the transistors in each cell. Data can be written or read at the same time. The circuit has the ability to read and write data at high speeds, making it suitable for applications where speed is important. It also has a low power consumption, which reduces the need for external power sources.
The BR93L56RFVM-WTR also has a special configuration of the circuit, which allows it to record data even when the power is off. This is useful in applications where long-term data storage is required. The circuit also has a built-in error checking and correction system, which allows for reliable data storage and retrieval.
In conclusion, the BR93L56RFVM-WTR is a type of memory with many applications, a simple working principle and a low power consumption. It is suitable for robotics and other electronic applications, due to its high speed data processing and long-term data storage capabilities.
The specific data is subject to PDF, and the above content is for reference
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