
BSF030NE2LQXUMA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSF030NE2LQXUMA1TR-ND |
Manufacturer Part#: |
BSF030NE2LQXUMA1 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 24A WDSON-2 |
More Detail: | N-Channel 25V 24A (Ta), 75A (Tc) 2.2W (Ta), 28W (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.27106 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 3-WDSON |
Supplier Device Package: | MG-WDSON-2, CanPAK M™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.2W (Ta), 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 75A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSF030NE2LQXUMA1 is a type of field-effect transistor (FET) used in high-frequency signal applications. It is a high-performance device that is suitable for use in applications requiring low input capacitance, high gain and excellent pulse response characteristics. It is manufactured using PowerTrench technology, which provides excellent high-speed switching performance and reduce power dissipation during switching.
The BSF030NE2LQXUMA1 is a later generation FET and it is capable of handling higher power than earlier models. It typically operates with a channel maximum voltage of 20V and it provides a very low channel-to-drain capacitance of 1.0pF. This makes it a good choice for applications where low input capacitance is essential, such as in high-frequency signal processing.
The BSF030NE2LQXUMA1 is a depletion-mode FET. This means that when the gate voltage is set to zero, the channel is at its maximum conductivity. Conversely, when the gate voltage is set to a more positive value, the channel conductivity decreases. This type of FET is typically used as a switch, allowing signals to be turned on and off rapidly. It requires a positive voltage on its gate relative to the source to be switched on, and a negative voltage to be switched off.
The BSF030NE2LQXUMA1 has a maximum drain-source on-resistance of 11.2 ohms. This makes it suitable for applications that require low power loss during switching. It is also capable of handling high frequency signals, with a maximum frequency rating of 6.5GHz. This makes the BSF030NE2LQXUMA1 a good choice for high-speed signal processing applications.
The BSF030NE2LQXUMA1 is an excellent choice for applications requiring high-speed switching, low input capacitance, and excellent pulse response. It provides excellent high-frequency performance and low power loss in switching applications. Its depletion-mode characteristics make it suitable for use as a switch, allowing signals to be turned on and off rapidly. It is an ideal choice for use in high-speed signal processing applications.
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