BSF030NE2LQXUMA1 Allicdata Electronics

BSF030NE2LQXUMA1 Discrete Semiconductor Products

Allicdata Part #:

BSF030NE2LQXUMA1TR-ND

Manufacturer Part#:

BSF030NE2LQXUMA1

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 24A WDSON-2
More Detail: N-Channel 25V 24A (Ta), 75A (Tc) 2.2W (Ta), 28W (T...
DataSheet: BSF030NE2LQXUMA1 datasheetBSF030NE2LQXUMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.27106
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 3-WDSON
Supplier Device Package: MG-WDSON-2, CanPAK M™
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 75A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSF030NE2LQXUMA1 is a type of field-effect transistor (FET) used in high-frequency signal applications. It is a high-performance device that is suitable for use in applications requiring low input capacitance, high gain and excellent pulse response characteristics. It is manufactured using PowerTrench technology, which provides excellent high-speed switching performance and reduce power dissipation during switching.

The BSF030NE2LQXUMA1 is a later generation FET and it is capable of handling higher power than earlier models. It typically operates with a channel maximum voltage of 20V and it provides a very low channel-to-drain capacitance of 1.0pF. This makes it a good choice for applications where low input capacitance is essential, such as in high-frequency signal processing.

The BSF030NE2LQXUMA1 is a depletion-mode FET. This means that when the gate voltage is set to zero, the channel is at its maximum conductivity. Conversely, when the gate voltage is set to a more positive value, the channel conductivity decreases. This type of FET is typically used as a switch, allowing signals to be turned on and off rapidly. It requires a positive voltage on its gate relative to the source to be switched on, and a negative voltage to be switched off.

The BSF030NE2LQXUMA1 has a maximum drain-source on-resistance of 11.2 ohms. This makes it suitable for applications that require low power loss during switching. It is also capable of handling high frequency signals, with a maximum frequency rating of 6.5GHz. This makes the BSF030NE2LQXUMA1 a good choice for high-speed signal processing applications.

The BSF030NE2LQXUMA1 is an excellent choice for applications requiring high-speed switching, low input capacitance, and excellent pulse response. It provides excellent high-frequency performance and low power loss in switching applications. Its depletion-mode characteristics make it suitable for use as a switch, allowing signals to be turned on and off rapidly. It is an ideal choice for use in high-speed signal processing applications.

The specific data is subject to PDF, and the above content is for reference

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