BSF083N03LQ G

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BSF083N03LQ G Application Field And Working Principle

A MOSFET or metal-oxide-semiconductor field effect transistor is an active transistor that is widely used to control power switching in many consumer applications. The BSF083N03LQ G from STMicroelectronics is an ultra-low voltage N-type enhancement mode field-effect power MOSFET designed for high-efficiency, low power switching in battery-based applications. This document will explain the BSF083N03LQ G application field and working principle.

The BSF083N03LQ G is primarily used in applications involving power conversion. Examples of its use include voltage conversion in DC-DC converters, current control in motor drives, and power switching in low power audio devices and circuit protection. It is also suitable for applications that require minimal power dissipation, low noise operation and low switching losses. It is rated for 3.8A and has a drain-source voltage of -20V.

This MOSFET is an N-type device and this type of FET is known as Enhancement Mode devices. This means that the FET must be forward biased for the channel to be enabled and only then does the transistor become active. This is achieved by a positive voltage that is applied to the gate of the FET. When this happens, the channel is “opened” and the FET can then conduct current from the drain to the source.

The BSF083N03LQ G is also designed with ESD protection and is capable of withstanding up to 8kV. It has an integrated ESD protection diode to help protect the device from ESD damage. It is also designed for low leakage current and consumes very less power, making it ideal for low power applications. In addition, it is also very stable due to its high gain and low output impedance.

The BSF083N03LQ G is an excellent choice for many applications. Its features make it an ideal device for DC-DC conversion, motor drive current control, audio power supply switching, and circuit protection. It is also a great choice for applications that require low power consumption, low noise operation, and low switching losses. With its low output impedance, ESD protection and low leakage current, the BSF083N03LQ G is a reliable and efficient choice for many power applications.

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