BSF035NE2LQXUMA1

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	3-WDSON
Supplier Device Package:	MG-WDSON-2, CanPAK M™
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.2W (Ta), 28W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1862pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta), 69A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BSF035NE2LQXUMA1 Application Field and Working Principle

Introduction

BSF035NE2LQXUMA1 is a long-channel enhancement-mode Insulated Gate Bipolar Transistor (IGBT) that belongs to a large family of small-signal devices, called Field Effect Transistors (FETs). BSF035NE2LQXUMA1 is a single type FET, based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of FET is suitable for high frequency operation, low noise, power switching, and current switching applications in a wide variety of industrial and consumer electronics.

Application Fields

The main uses for the BSF035NE2LQXUMA1 FET are for switching, amplifier circuits, and integrated circuit (IC) protection. It is most commonly used in power switching applications, due to its low power consumption, low gate-voltage requirements, and high speed. It is also used in power devices such as digital memory and logic devices, voltage regulators, and switching converters. Additionally, it can be used as a voltage-controlled current source (VCS) in regulated and programmable power supplies, as well as in specialized high frequency circuits.

Memristor Applications

The BSF035NE2LQXUMA1 is also well suited for applications in memristor devices, which are a type of non-volatile memory (NVM) devices. Memristors are similar to transistors, in that both contain a gate and a semiconductor. However, memristors use a special gate resistance that varies over time according to gate voltage, resulting in a memory effect. This makes memristors ideal for use in NVM devices, where a stable stored state is necessary.

Optical Switching

The BSF035NE2LQXUMA1 is also used for optical applications, such as optical switching. This FET is particularly well-suited for optical switching because of its low power requirements and high speed. Optical switches are used in many applications, including digital telecommunication networks, optical data storage systems, and optical imaging.

Power Applications

The BSF035NE2LQXUMA1 is also suitable for use in power applications, such as power switching and control. Due to its low power requirements and high speed, it is used in many types of power devices, from power supplies to motor drives. It is also used in DC/DC converters, race buses, and motor control circuits.

Working Principle

The working principle of the BSF035NE2LQXUMA1 FET is similar to other FETs. It is composed of a stack of doped semiconductor layers between two gate electrodes. A voltage is applied to the gate electrodes, which creates an electric field in the channel between them. This electric field reduces the current in the channel, making it easier to control the flow of current by adjusting the applied voltage.

Conclusion

The BSF035NE2LQXUMA1 is a single type FET, based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET), suitable for use in many different types of applications in the field of electronics. It is used for power switching applications, as well as memristor devices, optical switching, and power applications. Its working principle is similar to other FETs, as a voltage applied to its gate electrodes creates an electric field in the channel between them, allowing for the control of the flow of current.

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