Allicdata Part #: | BSL314PEH6327XTSA1-ND |
Manufacturer Part#: |
BSL314PEH6327XTSA1 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 30V 1.5A 6TSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 1.5A 500mW Sur... |
DataSheet: | BSL314PEH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14037 |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 6.3µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 294pF @ 15V |
Power - Max: | 500mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | PG-TSOP6-6 |
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BSL314PEH6327XTSA1 is a type of metallic oxide semiconductor field-effect transistor (MOSFET) which is mainly used for switchgear and motor control application. It is a planar dual die based three-level device having complementary n-channel and p-channel logic levels. The device integrates two n-channel MOSFETs, an n-channel depletion MOSFET and a p-channel enhancement MOSFET, in a single package. Its bidirectional feature eliminates the need of an external switch to make the circuit complete and thereby leading to optimized cost and space saving. The device also features electro-static discharge protection and enables lower drive voltage.
The working principle of BSL314PEH6327XTSA1 is based on the application of an electrical field, generated by the gate electrode of the MOSFET transistor, to control the flow of electrical current between the source and drain electrodes. This principle is also known as field-effect transistor or FET operation. In this operation, the current will flow between the source and the drain when a potential difference is applied between the gate and the source. The amount of current that flows depends on the magnitude of the voltage applied to the gate terminal of the FET.
BSL314PEH6327XTSA1 is usually used as an integrated switching device for switchgear and motor control applications. It can precisely control the power that is transferred between the load and the supply and can be used for switching currents that are as high as 200A. The built-in ESD protection ensures the safe transfer of signals from the driver to the load. The device is also suitable for high-frequency switching applications and it can handle frequencies as high as 10kHz.
In summary, BSL314PEH6327XTSA1 is an advanced type of MOSFET transistor which is widely used for switchgear and motor control applications. It features both n-channel and p-channel logic levels, and supports up to 200A of current. The device is also suitable for high-frequency switching applications, and features built-in electro-static discharge protection.
The specific data is subject to PDF, and the above content is for reference
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