Allicdata Part #: | BSL307SPT-ND |
Manufacturer Part#: |
BSL307SPT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 5.5A 6-TSOP |
More Detail: | P-Channel 30V 5.5A (Ta) 2W (Ta) Surface Mount PG-T... |
DataSheet: | BSL307SPT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 40µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | PG-TSOP6-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 805pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The BSL307SPT transistor is a field-effect transistor (FET) manufactured by Infineon that provides improved internal characterstics over standard FETs. It is a single-gate MOSFET, meaning that it includes only one channel. This channel is known as a source-drain channel, and it determines the transistor’s operation potential. This single-gate MOSFET offers higher current throughput than standard FETs, making it a great choice for applications that require high power efficiency.
The BSL307SPT transistor is typically used in power electronics applications, such as supplying circuit boards with power. The transistor is compatible with a wide range of operating voltages, ranging from 18V to 1V. This makes it suitable for powering circuit boards that require a consistent voltage. Additionally, the BSL307SPT can be used to regulate current, as it provides superior current control compared to other FETs.
The internal workings of the BSL307SPT are dictated by its source-drain channel. The source-drain channel is made up of silicon atoms arranged in a cylindrical shape, known as a N-type semiconductor. This N-type semiconductor provides an efficient switch, allowing the transistor to easily move electrons from one source and drain pins. This arrangement of silicon atoms also helps the BSL307SPT maintain a low on-resistance, meaning that it can provide high current throughputs with minimal loss.
The BSL307SPT transistor is particularly useful for applications that require a large amount of current with minimal loss. For example, the transistor can be used to regulate current in portable electronics and other small devices. Additionally, the BSL307SPT can be used to provide improved efficiency in electric vehicles, as its high current throughput allows for improved performance.
The BSL307SPT’s operation is determined by the electric fields produced by its source and drain pins. When a current is applied to the source pin, an electric field is generated that moves electrons from one side of the source-drain channel to the other. This creates a flow of electric current between the source and the drain. This process is repeated each time a new current is applied to the source pin, allowing the BSL307SPT to regulate the current between the source and the drain.
In summary, the BSL307SPT transistor is a single-gate MOSFET that can be used to regulate current in a wide range of applications. The transistors unique source-drain channel allows it to provide improved current throughputs with minimal loss. Additionally, the BSL307SPT is compatible with a wide range of operating voltages, making it an ideal choice for applications requiring high power efficiency.
The specific data is subject to PDF, and the above content is for reference
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