Allicdata Part #: | BSL373SNH6327XTSA1-ND |
Manufacturer Part#: |
BSL373SNH6327XTSA1 |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 2A 6TSOP |
More Detail: | N-Channel 100V 2A (Ta) 2W (Ta) Surface Mount PG-TS... |
DataSheet: | BSL373SNH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.18889 |
Vgs(th) (Max) @ Id: | 4V @ 218µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | PG-TSOP6-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 265pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 230 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSL373SNH6327XTSA1 is a single N-Channel Enhancement Mode Field Effect Transistor (MOSFET). This MOSFET is commonly used for applications where a robust solution is required with high feature integration, fast switching speeds and low on-resistance.
The BSL373SNH6327XTSA1 is suited for switching and linear applications in voltage levels ranging from 20V to 100V and frequencies up to 1 MHz. It features a low gate charge and low on-resistance which makes it ideal for applications that require fast switching speeds while consuming less power.
It has a low threshold voltage and an intricate gate structure which makes it ideal for high efficiency applications such as DC/DC converters and LED lighting.
The MOSFET has excellent thermal performance and can withstand a continuous drain-to-source voltage of up to 100V and a maximum operating temperature of 175°C. It has a maximum gate-to-source voltage of 18V and a maximum drain current of 150A.
In addition, the BSL373SNH6327XTSA1 offers a wide range of protection features and design options. It includes current limiting, thermal limiting, and overvoltage protection, as well as an adjustable rise time. It also features a process-dependent ‘safe operating area’ so designers can select an appropriate maximum on-resistance for their specific application.
The working principle of the BSL373SNH6327XTSA1 can be broken down as follows: When a positive voltage is applied to the Gate terminal, it causes an electric field which attracts the electrons in the channel. This creates an inversion layer of electrons in the channel which, in turn, allows current to flow through the channel between the Drain and Source terminals. When the voltage applied to the Gate terminal is removed, the electric field reverses and the inversion layer of electrons is depleted, turning off the transistor.
Therefore, the BSL373SNH6327XTSA1 is an ideal solution for a wide range of applications that require fast switching at high current and low on-resistance. It features an intricate gate structure, low gate charge and low threshold voltage, as well as excellent thermal performance. It offers designers an adjustable rise time and a safe operating area, as well as a range of protection features. As such, it is the perfect choice for high efficiency applications such as DC/DC converters and LED lighting.
The specific data is subject to PDF, and the above content is for reference
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