BSL302SNH6327XTSA1

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BSL302SNH6327XTSA1 is an enhancement-mode n-channel, vertical double-diffused power transistor (with series source and source-Zener, negative-gate techonology) designed for use in AC to DC SMPS applications.

The transistor is particularly suitable for switching current or voltage at higher frequencies than traditional bipolar transistors. It features low gate charge, low RDS(on), low capacitances and low temperature coefficients making it ideal for use in a wide variety of applications, such as DC-DC converters, motors, solenoids, actuation and power control. With its extended product lifetime, the BSL302SNH6327XTSA1 can operate over a wide range of temperatures. The device offers excellent performance and reliability.

The BSL302SNH6327XTSA1 features an advanced vertical double-diffused MOSFET (VDMOS) structure featuring two VDMOS elements internally connected in series. This seried structure results in higher breakdown voltage compared to single MOSFET elements, as well as improved linear performance. Its low RDS(on) and low gate charge (Qg) and capacitances ensure long-lasting, reliable performance in all operating conditions.

The BSL302SNH6327XTSA1 works through the following mechanism. When voltage is applied across the gate and source, the channel is created between the two ends of the MOSFET. This channel allows current to flow between the source and drain when the gate voltage is higher than a certain threshold voltage.The voltage applied to the gate controls the size of the channel, or in other words, the amount of current flowing through the device. As the gate voltage increases, the current flowing through the device increases, allowing for more efficient operation.The low gate charge ensures that the gate voltage does not need to be as high for operation, as well as affording less power dissipation for the gate.

The BSL302SNH6327XTSA1 is suitable for a wide variety of applications, from AC to DC SMPS applications such as DC-DC converters and DC motor control, as well as ultra-low-power electronic systems such as wearable compute devices and Internet of Things (IoT) sensors.

In summary, the BSL302SNH6327XTSA1 is an advanced vertical double-diffused MOSFET featuring a series source and source-Zener, negative-gate technology. It features low gate charge, low RDS(on), low capacitances and low temperature coefficients, offering excellent performance and reliability in a wide variety of applications, such as AC to DC SMPS, DC-DC converters, and ultra-low-power electronics systems.

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