Allicdata Part #: | BSL316CL6327HTSA1TR-ND |
Manufacturer Part#: |
BSL316CL6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N/P-CH 30V TSOP-6 |
More Detail: | Mosfet Array N and P-Channel 30V 1.4A, 1.5A 500mW ... |
DataSheet: | BSL316CL6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 3.7µA |
Base Part Number: | BSL316 |
Supplier Device Package: | PG-TSOP6-6 |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 500mW |
Input Capacitance (Ciss) (Max) @ Vds: | 94pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 0.6nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A, 1.5A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSL316CL6327HTSA1 is a high-performance low on-resistance MOSFET, which means that it is a metal-oxide-semiconductor field-effect transistor (MOSFET) that has an extremely low resistance when the gate voltage is applied. This type of transistor is used for applications such as general power switching, amplifier circuits and analog signals. It is also used in high frequency wide band amplifiers, power converters, and other high-end electronic circuits.
The BSL316CL6327HTSA1 is composed of a silicon-based n-type channel with an integrated gate oxide layer. It is manufactured using a specific technology called Very Large Scale Integration (VSLI) which allows for the production of a very low resistance power MOSFET. The channels between the source and drain regions are very narrow which results in the low-resistance characteristic of the device. This makes it ideal for applications where power efficiency is required, such as in high-frequency switching circuits.
The BSL316CL6327HTSA1 works by using the gate voltage to control the movement of current through the MOSFET. When the gate voltage is applied, a drain to source current is present, which is determined by the amount of gate voltage being applied. By controlling the gate voltage, the current can be easily regulated, which makes this MOSFET ideal for applications such as motor drives, power converters and circuit switching applications that require high-efficiency output. By combining high-performance with a low on-resistance, the BSL316CL6327HTSA1 is able to deliver excellent performance when used in most electronic circuits.
The BSL316CL6327HTSA1 also has the ability to be integrated into several other electronic components in order to create an array. This array can then be used to increase the efficiency of the component, and it can also be used to perform more complex functions. By combining multiple MOSFETs into an array, more complex functions can be created, such as the ability to produce a wide range of currents and voltages. This is useful for high-frequency and high-efficiency switching applications, and it can greatly enhance the performance of the integrated circuit.
In conclusion, the BSL316CL6327HTSA1 is a high-performance low on-resistance MOSFET which is ideal for general power switching, amplifier circuits and analog signal applications. It has the ability to be connected into an array, in order to increase performance. This MOSFET delivers excellent performance when used in most electronic circuits, thanks to its low on-resistance and high-performance properties. For this reason, it is one of the most reliable and efficient transistors for high-frequency, high-efficiency and complex circuit applications.
The specific data is subject to PDF, and the above content is for reference
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