Allicdata Part #: | BSL303SPEH6327XTSA1-ND |
Manufacturer Part#: |
BSL303SPEH6327XTSA1 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 6.3A TSOP-6 |
More Detail: | P-Channel 30V 6.3A (Ta) 2W (Ta) Surface Mount PG-T... |
DataSheet: | BSL303SPEH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14913 |
Vgs(th) (Max) @ Id: | 2V @ 30µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | PG-TSOP6-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1401pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20.9nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 6.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSL303SPEH6327XTSA1 application field and working principle
The BSL303SPEH6327XTSA1 is a cadmium sulphide photosensitive field-effect transistor (CdS FET) manufactured by Abundant Electronics. Processed in the company\'s state-of-the-art 5 μm CMOS technology, it is the most sensitve CdS FET currently on the market. It has a wide range of applications in various industries, such as automotive, industrial, and consumer electronics.
A CdS FET is an FET device which uses a photosensitive material as the active region. In this device, a thin film of CdS is deposited over a gate dielectric, making the material very sensitive to light. The transistor is quite resistant to heat and exhibits a high gain. This makes it ideal for use in optoelectronic applications, where the signal from a light signal must be amplified further.
Working Principle
When activated by a light signal, the CdS material generates charge carriers, which modify the amount of current flow through the transistor. Depending on the intensity of the light and the bias applied, the current through the transistor can either be amplified or reduced. In other words, the device acts like a variable resistance, enabling the user to control the current flow by changing the external parameters.
The BSL303SPEH6327XTSA1 is a single-stage FET, meaning that it exhibits an n-type channel region when biased with a voltage source. This allows the device to be used in small-signal amplifiers, such as those found in automotive and industrial applications. Additionally, the device is robust and has a high tolerance for noise and EMI, making it a great choice for high-speed applications.
Applications
The BSL303SPEH6327XTSA1 is a versatile device with a wide range of applications. It is mainly used in optoelectronic applications, such as street lights, RGB LED lighting, and optical sensors. It can also be used in signal conditioning and LED display applications, and even in surge protection circuits. Furthermore, due to its low noise and EMI tolerance, the device can be employed in automotive and industrial applications, such as speed and proximity sensors, frequency regulators, and signal amplifiers.
The BSL303SPEH6327XTSA1 is a photosensitive CdS FET which utilizes a single-stage FET design. Due to its high sensitivity to light, the device is ideal for a wide range of optoelectronic applications. Additionally, its low noise and EMI tolerance make it suitable for use in industrial and automotive settings.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSL307SPT | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 5.5A 6-TS... |
BSL307SP | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 5.5A 6-TS... |
BSL302SNL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 7.1A TSOP... |
BSL307SPH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 5.5A 6TSO... |
BSL302SNH6327XTSA1 | Infineon Tec... | 0.16 $ | 1000 | MOSFET N-CH 30V 7.1A 6TSO... |
BSL308CL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 2.3A/2A... |
BSL308PEL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 2A 6TSOP... |
BSL307SPL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 5.5A TSOP... |
BSL314PEH6327XTSA1 | Infineon Tec... | 0.15 $ | 1000 | MOSFET 2P-CH 30V 1.5A 6TS... |
BSL316CL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N/P-CH 30V TSOP-6M... |
BSL306NL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 2.3A 6TS... |
BSL315PL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 1.5A TSO... |
BSL314PEL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 1.5A 6TS... |
BSL303SPEH6327XTSA1 | Infineon Tec... | 0.16 $ | 1000 | MOSFET P-CH 30V 6.3A TSOP... |
BSL372SNH6327XTSA1 | Infineon Tec... | 0.18 $ | 1000 | MOSFET N-CH 100V 2A 6TSOP... |
BSL373SNH6327XTSA1 | Infineon Tec... | 0.21 $ | 1000 | MOSFET N-CH 100V 2A 6TSOP... |
BSL305SPEH6327XTSA1 | Infineon Tec... | 0.15 $ | 1000 | MOSFET P-CH 30V 5.3A TSOP... |
BSL316CH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET N/P-CH 30V 1.4A/1.... |
BSL308CH6327XTSA1 | Infineon Tec... | 0.18 $ | 1000 | MOSFET N/P-CH 30V 2.3A/2A... |
BSL308PEH6327XTSA1 | Infineon Tec... | 0.18 $ | 1000 | MOSFET 2P-CH 30V 2A 6TSOP... |
BSL306NH6327XTSA1 | Infineon Tec... | 0.16 $ | 1000 | MOSFET 2N-CH 30V 2.3A 6TS... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...