Allicdata Part #: | BSM300GA120DLCHOSA1-ND |
Manufacturer Part#: |
BSM300GA120DLCHOSA1 |
Price: | $ 105.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 MED POWER 62MM-2 |
More Detail: | IGBT Module Single 1200V 570A 2250W Chassis Mount... |
DataSheet: | BSM300GA120DLCHOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 96.11420 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 570A |
Power - Max: | 2250W |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 300A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 22nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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BSM300GA120DLCHOSA1 is an insulated gate bipolar transistor (IGBT) module produced by Infineon Technologies. IGBT modules are commonly used in the electrical and power industry due to the efficient combination of insulated gate bipolar transistors (IGBTs) with associated diodes. This article provides an overview of the application field and working principle of BSM300GA120DLCHOSA1.
Application Field
BSM300GA120DLCHOSA1 is typically used in high power applications involving switching devices, such as motor drives, servo amplifiers and common DC/AC applications. It has a built-in with maximum blocking voltage of 1200V that provides efficient control for both high-voltage DC and AC switching applications. It features fast switching speeds, low conduction losses and excellent thermal conductivity.
The module is suitable for a variety of motion control applications, such as in elevators, power drives, material handling, robotics, traction systems and industrial automation. It is primarily used for motor control applications and for controlling high current applications such as induction heaters and power supplies. The module is also well suited for applications that require high-power ratings, such as locomotive traction, wind power and solar systems.
Working Principle
BSM300GA120DLCHOSA1 operating principle relies on insulated gate bipolar transistors (IGBTs), which combine the advantages of both bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). This combination creates an efficient switching device that is able to control the flow of current and voltage with low losses. The IGBT allows easy switching between low and high voltage levels by making currents flow in either direction through its controlled by voltage.
The module includes integral diodes with fast switching times and low conduction losses that provide a reverse biased voltage protection in applications requiring high power ratings. The diodes protect against reverse voltages, allowing the module to switch in both directions and control the flow of current in either direction. The module also offers excellent thermal conductivity, helping to keep the module cool and extending its life expectancy.
BSM300GA120DLCHOSA1 provides a powerful and efficient switching device and is suitable for a variety of electrical and power applications. It offers high power ratings, fast switching times, low losses and excellent thermal conductivity, making it ideal for applications such as motor drives, servo amplifiers, traction systems, industrial automation, inverters and other high power applications.
The specific data is subject to PDF, and the above content is for reference
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