Allicdata Part #: | BSM35GB120DN2HOSA1-ND |
Manufacturer Part#: |
BSM35GB120DN2HOSA1 |
Price: | $ 46.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 MED POWER 34MM-1 |
More Detail: | IGBT Module Half Bridge 1200V 50A 280W Chassis Mo... |
DataSheet: | BSM35GB120DN2HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 41.84400 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 50A |
Power - Max: | 280W |
Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 35A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 2nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSM35GB120DN2HOSA1 is one of the power modules widely used in the industry. It’s the ideal device when it comes to inverters and solar power systems, thanks to its high reliable design, low loss, small size, great insulation and low cost. In this article, we will discuss the application field and working principle of the BSM35GB120DN2HOSA1.
Overview
BSM35GB120DN2HOSA1 is a high power module composed of several insulated Gate Bipolar Transistors (IGBTs) and its corresponding freewheeling Diode. The package of this product is Hosodon, which has a low profile and a small footprint. It is well suited for high-density power supply applications due to its excellent thermal performance.
Application Field
The BSM35GB120DN2HOSA1 is widely used in the market for it has satisfactory performance in AC and DC converts systems, UPS, frequency conversion systems, and other kinds of motor drives. Thanks to its great properties, the BSM35GB120DN2HOSA1 can provide a wide speed range and long-life operation.
Furthermore, BSM35GB120DN2HOSA1 also has the capability to reduce power consumption and noise in an array of inverter, motor controller, and uninterruptible power supply applications. Moreover, the product is resistant to external disturbance, capable of long-term stable operation, and is even able to help greatly reduce the energy consumption.
Working Principle
The basic working principle of BSM35GB120DN2HOSA1 is very simple. It is a three-level switching circuit which works by using IGBTs instead of traditional MOSFETs (metal-oxide semiconductor field-effect transistors). By using IGBTs instead of MOSFETs, the usage of high-current is minimized, thus making it much more energy efficient than its counterparts.
At the same time, the BSM35GB120DN2HOSA1 is designed with a freewheeling diode which helps to reduce the voltage drop and provide a constant voltage across the entire circuit. This helps to reduce power consumption as well as ensuring consistent performance.
The IGBT is also designed with a temperature sensor which can monitor the temperature of the device and adjust the amount of power output accordingly, thus regulating the temperature and preventing any potential damage to the circuit boards.
Conclusion
To summarize, the BSM35GB120DN2HOSA1 is a powerful module and is an ideal choice in many applications due to its high reliable design, low loss, small size, great insulation, and low cost. Thanks to its three-level switching circuit design and its ability to regulate power consumption and temperature, it can provide an efficient and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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