BSM30GP60BOSA1

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BSM30GP60BOSA1 application field and working principle

BSM30GP60BOSA1 is a field-stop insulated gate bipolar transistor (IGBT) module manufactured by Infineon Technologies AG. It is a part of Infineon’s family of standard discrete IGBT modules such as BSR60 and many others. This family is designed to offer around twice the power density of existing standard discrete IGBTs.

Application Field

BSM30GP60BOSA1 is designed for industrial applications such as motor control and Uninterruptible Power Supplies (UPS). It is a high power switch module with a maximum switching current of 60A and a maximum collector-emitter voltage of 600V. It provides a DC switch with a simple one-sided element driving and fast switching time. It has direct short-circuit current capability; short-circuit limiting devices are not required.

BSM30GP60BOSA1 can be used in a wide range of applications that require efficient power switching and control. It is suitable for both motor control and Uninterruptible Power Supplies (UPS). It is also suitable for applications such as aeronautical, automotive, telecommunications, consumer products, medium to high voltage drives, traction and renewable energy.

Working Principle

IGBTs are a type of power semiconductor device that comprises of two main components – the insulated-gate bipolar transistor and a diode. It combines the control characteristics of a field-effect transistor (FET) with the high-current capability of a bipolar transistor. Like a FET, IGBTs use a thin gate oxide to control current flow, but unlike FETs, IGBTs can handle large currents and high voltages.

The BSM30GP60BOSA1 IGBT module is a dedicated device with low switching losses. It is composed of two modules (IGBT & Diode) mounted on the same baseplate. The IGBT is a vertical MOSFET device with a parasitic npn-transistor, embedded between the gate oxide layer and the drift region. The IGBT is driven by an externally applied voltage applied to the gate.

The diode module has a complementary structure which can handle reversed current for regenerative braking. This module also has a built-in temperature sensor that detects the junction temperature of the IGBT module. The temperature sensor is connected to a signal pin which can be used to detect the junction temperature. This allows the designer to protect the IGBT against thermal runaway.

The BSM30GP60BOSA1 IGBT module also features a field-stop layer at the channel-source junction, enabling the IGBT to be operated at high voltages and provides increased flexibility for the designer. This allows the designer to reduce the number of components required and the overall cost of the system.

In conclusion, the BSM30GP60BOSA1 is a high power switching module which is suitable for applications that require power switching and control. It is capable of handling large currents and voltages, and features a field-stop layer at the channel-source junction, enabling it to be used in high voltage applications. It also features a temperature sensor, allowing the designer to protect the module against thermal runaway.

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