BSM30GD60DLCBOSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BSM30GD60DLCBOSA1: Application Field and Working Principle

BSM30GD60DLCBOSA1 is a module produced by Infineon that combines two IGBTs and a Double-Diffused Metal-oxide Semiconductor Field-effect Transistor (DMFET) in a single package. This device is useful for applications requiring high-power switching, such as power supplies, motor control and electric vehicle drivetrains. It is part of a family of high-voltage and high-speed switches, designed for various applications and offering superior cost-performance as compared to other technologies.

What is an IGBT?

An IGBT is a type of semiconductor device that combines an insulated gate bipolar transistor (IGBT) and a Field Effect Transistor (FET). It features low gate drive power and very fast switching, making it well suited for high power switching applications. IGBTs are more efficient than standard BJT (Bipolar Junction Transistors) in most applications, providing higher operating frequencies and higher-on state voltage capability. Additionally, due to their low gate drive power and simpler cell structure, IGBTs help reduce the cost and size of power switching circuits.

Double-Diffused Metal-oxide Semiconductor Field-effect Transistor (DMFET)

A DMFET is a type of FET with an insulated gate. It consists of a single crystal silicon substrate with a doped source region in the form of a metal-oxide semiconductor (MOS) field effect transistor (FET). The source and drain regions are connected to the insulated gate and a high gate-to-source voltage can result in significantly higher speed and on-state voltage performance than a similar MOSFET with a floating gate. DMFETs are normally used for high-current applications where the current capacity needs to be high, such as in IGBTs.

BSM30GD60DLCBOSA1 Features and Benefits

The BSM30GD60DLCBOSA1 device combines two IGBTs and a DMFET, providing superior cost-performance compared to other technologies. It offers a high-performance gate drive, with a fast switching time, low switching losses, and a maximum gate voltage of 600 volts. This device also features a dv/dt-capable switching behavior, enabling it to be used in high voltage applications. Additionally, the BSM30GD60DLCBOSA1 has a soft-switching mode, enabling it to switch frequencies up to 4kHz and reducing the switching loss generated during its operation.

Applications

The BSM30GD60DLCBOSA1 is suitable for applications requiring high-power switching, such as power supplies, motor control, and electric vehicle drivetrains. It is also used in other high-voltage, high-current applications where its superior cost-performance and superior switching characteristics enable it to provide superior performance compared to other technologies.

Conclusion

The BSM30GD60DLCBOSA1 is a type of IGBT module produced by Infineon combining two IGBTs and a DMFET in a single package. It offers superior cost-performance compared to other technologies, and is suitable for applications requiring high power switching, such as power supplies, motor control, and electric vehicle drivetrains. With its high-performance gate drive and its dv/dt-capable switching behavior, the BSM30GD60DLCBOSA1 enables high voltage applications and switching frequencies up to 4kHz.

The specific data is subject to PDF, and the above content is for reference