BSM35GD120DN2

Series:	--
Part Status:	Obsolete
IGBT Type:	NPT
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	50A
Power - Max:	280W
Vce(on) (Max) @ Vge, Ic:	3.2V @ 15V, 35A
Input Capacitance (Cies) @ Vce:	2nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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BSM35GD120DN2 Application Field and Working PrincipleThe BSM35GD120DN2 is a component of IGBT (Insulated-Gate Bipolar Transistor) Modules, which are used in a wide variety of electronic and power electronics applications. These applications range from the momentary control of electrical components to the efficient conversion of electrical power. IGBT Modules have several advantages over other types of transistors due to their increased efficiency and power density. As a result, they are widely used in many high-power applications such as motor control, UPS systems, inverter drives, and home appliances. This article will explain the applications of BSM35GD120DN2 and the working principle of IGBT Modules.Applications of BSM35GD120DN2The BSM35GD120DN2 is a IGBT Module that is designed for high-power applications including motor control, UPS systems, and inverter drives. It is also used in a wide variety of other applications such as high-speed switching, DC drives, solar inverters, and home appliances, where high switching frequencies and large currents are commonly found.The BSM35GD120DN2 offers advantages over other types of IGBT Modules such as increased efficiency and maximum power handling. This results in a lower total cost of ownership for the user, making it an attractive choice for many high-power applications.Working Principle of IGBT ModulesIGBT Modules are composed of two main components, the gate and the collector. The gate is connected to the collector through an insulated gate insulation layer that provides a semiconductor barrier. Current flows through the gate and collector when a voltage is applied to the gate.The gate-collector voltage determines the amount of current that can flow through the IGBT Module. When the gate voltage is increased, the amount of current that can flow through the IGBT increases as well. This allows for precise and efficient control of current. The insulation barrier between the gate and collector also allows for the efficient conversion of electrical power. The energy conversion efficiency of an IGBT is typically much higher than other types of transistors. This makes IGBT Modules an attractive choice for high-power applications where efficiency and power density are critical factors.ConclusionThe BSM35GD120DN2 is a powerful and reliable IGBT Module that is suitable for use in many high-power applications. It offers advantages such as increased efficiency and maximum power handling that make it an attractive option for customers. The working principle of IGBT Modules allows for precise and efficient control of current as well as the efficient conversion of electrical power.

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