Allicdata Part #: | BSM300GA120DLCSHOSA1-ND |
Manufacturer Part#: |
BSM300GA120DLCSHOSA1 |
Price: | $ 105.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 MED POWER 62MM-2 |
More Detail: | IGBT Module Single 1200V 570A 2250W Chassis Mount... |
DataSheet: | BSM300GA120DLCSHOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 96.11420 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 570A |
Power - Max: | 2250W |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 300A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 22nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The BSM300GA120DLCSHOSA1 is a medium power, insulated gate bipolar transistor (IGBT) module designed for use in a range of applications. This module is designed for use as an inverter, a rectifier, or a motor drive component in applications such as industrial motor control, solar inverters, DC/DC converters, and electrical traction drives. It features a high current density, low on-state voltage, and fast switching speed.
The BSM300GA120DLCSHOSA1 is an example of a wide-bandgap semiconductor device, using Silicon-Carbide (SiC) technology. It is composed of two series-connected IGBT chips with built-in anti-parallel free wheeling diodes, fully integrated in a hard plastic package. This device is highly reliable and ensures high power conversion efficiency even in extreme weather conditions.
The BSM300GA120DLCSHOSA1 has a rated current of 300A, a peak current of 450A, and a voltage rating of 1200V. It can handle power up to 720kW and frequencies up to 6kHz, making it suitable for medium-power applications. In addition, the device is equipped with several self-protection features such as over temperature protection, an interlocking diode, an open-base transistor, under-voltage protection, overload protection, and current limitation.
The BSM300GA120DLCSHOSA1 utilizes the process of voltage to current gain, commonly referred to as a spark gap. This device is able to use a relatively small voltage input to produce a large current output in order to drive a large load. It accomplishes this role by using two inter-connected thyristors to provide a low-voltage, high-current switching circuit. This type of transistor also offers a great deal of protection to the load by providing protection against short circuits and surges.
In its simplest form, the BSM300GA120DLCSHOSA1 consists of two IGBTs with anti-parallel free-wheeling diodes connected in a bridge circuit. When it is switched on, current flows through the IGBTs and the free-wheeling diodes. The IGBTs conduct current in one direction, while charging up the free-wheeling diodes. The reverse happens when the device is switched off, in which case the free-wheeling diodes discharge the stored energy. This enables the device to act as an inverter, rectifier, or motor drive.
The BSM300GA120DLCSHOSA1 is typically used in applications such as industrial motor control, solar inverters, welding machines, traction drives, DC/DC converters and direct torque control of a permanent magnet motor. It is also suitable for applications in medium- and high-voltage DC motor drives, automotive inverters, and renewable energy systems. In addition, the device is highly reliable and efficient, making it a great choice for applications that require a reliable and efficient power switch.
The specific data is subject to PDF, and the above content is for reference
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